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Pregled bibliografske jedinice broj: 886169

Low threshold, electrically injected InGaAsP (1.3 um) vertical cavity lasers on GaAs substrates

Dudley, J.J.; Babić, Dubravko I.; Mirin, R.; Yang, L.; Miller, B.I.; Ram, R.J.; Reynolds, T.; Hu, E.L.; Bowers, J.E.
Low threshold, electrically injected InGaAsP (1.3 um) vertical cavity lasers on GaAs substrates // IEEE Transactions on electron devices, 40 (1993), 11; 2119-2120 doi:10.1109/16.239794 (međunarodna recenzija, članak, znanstveni)

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Naslov
Low threshold, electrically injected InGaAsP (1.3 um) vertical cavity lasers on GaAs substrates

Autori
Dudley, J.J. ; Babić, Dubravko I. ; Mirin, R. ; Yang, L. ; Miller, B.I. ; Ram, R.J. ; Reynolds, T. ; Hu, E.L. ; Bowers, J.E.

Izvornik
IEEE Transactions on electron devices (0018-9383) 40 (1993), 11; 2119-2120

Vrsta, podvrsta i kategorija rada
Radovi u časopisima, članak, znanstveni

Ključne riječi
Gallium arsenide, Vertical cavity surface emitting lasers, Mirrors, Surface emitting lasers, Threshold current, Temperature, Quantum well lasers, Dielectric substrates, Indium phosphide, Laser transitions

Sažetak
Electrically injected long-wavelength vertical cavity lasers (VCLs) employing InGaAsP (1.3 um) active regions fused to GaAs-AlAs mirrors on GaAs substrates are demonstrated. The lasers operate pulsed at room temperature (300 K) with a threshold current of 9 mA and a threshold current density of 9.5 kA/cm/sup 2/. These devices operate CW (continuous wave) at temperatures as high as 230 K ; the CW threshold current at 230 K is 3.6 mA. The use of the GaAs-AlAs mirror makes the device more mechanically robust, improving the thermal conductivity and reducing problems with nonuniform injection.

Izvorni jezik
Engleski



POVEZANOST RADA

Profili:

Avatar Url Dubravko Babić (autor)

Poveznice na cjeloviti tekst rada:

doi ieeexplore.ieee.org

Citiraj ovu publikaciju:

Dudley, J.J.; Babić, Dubravko I.; Mirin, R.; Yang, L.; Miller, B.I.; Ram, R.J.; Reynolds, T.; Hu, E.L.; Bowers, J.E.
Low threshold, electrically injected InGaAsP (1.3 um) vertical cavity lasers on GaAs substrates // IEEE Transactions on electron devices, 40 (1993), 11; 2119-2120 doi:10.1109/16.239794 (međunarodna recenzija, članak, znanstveni)
Dudley, J., Babić, D., Mirin, R., Yang, L., Miller, B., Ram, R., Reynolds, T., Hu, E. & Bowers, J. (1993) Low threshold, electrically injected InGaAsP (1.3 um) vertical cavity lasers on GaAs substrates. IEEE Transactions on electron devices, 40 (11), 2119-2120 doi:10.1109/16.239794.
@article{article, author = {Dudley, J.J. and Babi\'{c}, Dubravko I. and Mirin, R. and Yang, L. and Miller, B.I. and Ram, R.J. and Reynolds, T. and Hu, E.L. and Bowers, J.E.}, year = {1993}, pages = {2119-2120}, DOI = {10.1109/16.239794}, keywords = {Gallium arsenide, Vertical cavity surface emitting lasers, Mirrors, Surface emitting lasers, Threshold current, Temperature, Quantum well lasers, Dielectric substrates, Indium phosphide, Laser transitions}, journal = {IEEE Transactions on electron devices}, doi = {10.1109/16.239794}, volume = {40}, number = {11}, issn = {0018-9383}, title = {Low threshold, electrically injected InGaAsP (1.3 um) vertical cavity lasers on GaAs substrates}, keyword = {Gallium arsenide, Vertical cavity surface emitting lasers, Mirrors, Surface emitting lasers, Threshold current, Temperature, Quantum well lasers, Dielectric substrates, Indium phosphide, Laser transitions} }
@article{article, author = {Dudley, J.J. and Babi\'{c}, Dubravko I. and Mirin, R. and Yang, L. and Miller, B.I. and Ram, R.J. and Reynolds, T. and Hu, E.L. and Bowers, J.E.}, year = {1993}, pages = {2119-2120}, DOI = {10.1109/16.239794}, keywords = {Gallium arsenide, Vertical cavity surface emitting lasers, Mirrors, Surface emitting lasers, Threshold current, Temperature, Quantum well lasers, Dielectric substrates, Indium phosphide, Laser transitions}, journal = {IEEE Transactions on electron devices}, doi = {10.1109/16.239794}, volume = {40}, number = {11}, issn = {0018-9383}, title = {Low threshold, electrically injected InGaAsP (1.3 um) vertical cavity lasers on GaAs substrates}, keyword = {Gallium arsenide, Vertical cavity surface emitting lasers, Mirrors, Surface emitting lasers, Threshold current, Temperature, Quantum well lasers, Dielectric substrates, Indium phosphide, Laser transitions} }

Časopis indeksira:


  • Current Contents Connect (CCC)
  • Web of Science Core Collection (WoSCC)
    • SCI-EXP, SSCI i/ili A&HCI
  • Scopus

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