Pregled bibliografske jedinice broj: 886166
Laser machining of GaN-on-diamond wafers
Laser machining of GaN-on-diamond wafers // Diamond and Related Materials, 20 (2011), 5/6; 675-681 doi:10.1016/j.diamond.2011.03.017 (međunarodna recenzija, članak, znanstveni)
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Naslov
Laser machining of GaN-on-diamond wafers
Autori
Babić, Dubravko I. ; Diduck, Quentin ; Faili, Firooz ; Wasserbauer, John ; Lowe, Frank ; Francis, Daniel ; Ejeckam, Felix
Izvornik
Diamond and Related Materials (0925-9635) 20
(2011), 5/6;
675-681
Vrsta, podvrsta i kategorija rada
Radovi u časopisima, članak, znanstveni
Ključne riječi
Gallium nitride on diamond ; Laser machining ; AlGaN/GaN high-electron mobility transistors ; Via processing in diamond ; Diamond wafer dicing
Sažetak
The commercialization of gallium-nitride microwave circuits on diamond substrates requires chip-dicing technology and via formation process compatible with standard semiconductor processes. This paper discusses issues related to dicing and drilling of GaN-on-diamond wafers for RF power transistor applications (die size < 1 mm2) using laser micromachining.
Izvorni jezik
Engleski
Citiraj ovu publikaciju:
Časopis indeksira:
- Current Contents Connect (CCC)
- Web of Science Core Collection (WoSCC)
- Science Citation Index Expanded (SCI-EXP)
- SCI-EXP, SSCI i/ili A&HCI
- Scopus