Pretraga

Pretražite po imenu i prezimenu autora, mentora, urednika, prevoditelja

Napredna pretraga

Pregled bibliografske jedinice broj: 886165

Frequency performance enhancement of AlGaN/GaN HEMTs on diamond

Diduck, Q.; Felbinger, J.; Eastman, L.F.; Francis, D.; Wasserbauer, J.; Faili, F.; Babić, Dubravko I.; Ejeckam, F.
Frequency performance enhancement of AlGaN/GaN HEMTs on diamond // Electronics Letters, 45 (2009), 14; 758-759 doi:10.1049/el.2009.1122 (međunarodna recenzija, članak, znanstveni)

CROSBI ID: 886165 Za ispravke kontaktirajte CROSBI podršku putem web obrasca

Naslov
Frequency performance enhancement of AlGaN/GaN HEMTs on diamond

Autori
Diduck, Q. ; Felbinger, J. ; Eastman, L.F. ; Francis, D. ; Wasserbauer, J. ; Faili, F. ; Babić, Dubravko I. ; Ejeckam, F.

Izvornik
Electronics Letters (0013-5194) 45 (2009), 14; 758-759

Vrsta, podvrsta i kategorija rada
Radovi u časopisima, članak, znanstveni

Ključne riječi
III-V semiconductors, aluminium compounds, gallium compounds, high electron mobility transistors

Sažetak
The performance of an AlGaN/GaN high electron mobility transistor (HEMT) on diamond substrate is reported. Presented is a device with a gate footprint LG =40 nm and a periphery WG = 100 mum that exhibits fT = 85 GHz and fmax = 95 GHz. It is believed that this represents the best frequency performance of a GaN-on-diamond HEMT.

Izvorni jezik
Engleski



POVEZANOST RADA

Profili:

Avatar Url Dubravko Babić (autor)

Poveznice na cjeloviti tekst rada:

doi www.crossref.org dx.doi.org

Citiraj ovu publikaciju:

Diduck, Q.; Felbinger, J.; Eastman, L.F.; Francis, D.; Wasserbauer, J.; Faili, F.; Babić, Dubravko I.; Ejeckam, F.
Frequency performance enhancement of AlGaN/GaN HEMTs on diamond // Electronics Letters, 45 (2009), 14; 758-759 doi:10.1049/el.2009.1122 (međunarodna recenzija, članak, znanstveni)
Diduck, Q., Felbinger, J., Eastman, L., Francis, D., Wasserbauer, J., Faili, F., Babić, D. & Ejeckam, F. (2009) Frequency performance enhancement of AlGaN/GaN HEMTs on diamond. Electronics Letters, 45 (14), 758-759 doi:10.1049/el.2009.1122.
@article{article, author = {Diduck, Q. and Felbinger, J. and Eastman, L.F. and Francis, D. and Wasserbauer, J. and Faili, F. and Babic\', Dubravko I. and Ejeckam, F.}, year = {2009}, pages = {758-759}, DOI = {10.1049/el.2009.1122}, keywords = {III-V semiconductors, aluminium compounds, gallium compounds, high electron mobility transistors}, journal = {Electronics Letters}, doi = {10.1049/el.2009.1122}, volume = {45}, number = {14}, issn = {0013-5194}, title = {Frequency performance enhancement of AlGaN/GaN HEMTs on diamond}, keyword = {III-V semiconductors, aluminium compounds, gallium compounds, high electron mobility transistors} }
@article{article, author = {Diduck, Q. and Felbinger, J. and Eastman, L.F. and Francis, D. and Wasserbauer, J. and Faili, F. and Babic\', Dubravko I. and Ejeckam, F.}, year = {2009}, pages = {758-759}, DOI = {10.1049/el.2009.1122}, keywords = {III-V semiconductors, aluminium compounds, gallium compounds, high electron mobility transistors}, journal = {Electronics Letters}, doi = {10.1049/el.2009.1122}, volume = {45}, number = {14}, issn = {0013-5194}, title = {Frequency performance enhancement of AlGaN/GaN HEMTs on diamond}, keyword = {III-V semiconductors, aluminium compounds, gallium compounds, high electron mobility transistors} }

Časopis indeksira:


  • Current Contents Connect (CCC)
  • Web of Science Core Collection (WoSCC)
    • Science Citation Index Expanded (SCI-EXP)
    • SCI-EXP, SSCI i/ili A&HCI
  • Scopus

Citati:

    Altmetrijski pokazatelji:


    Podijeli:





    Contrast
    Increase Font
    Decrease Font
    Dyslexic Font
    CROSBI koristi kolačiće (cookies) kako bi poboljšao funkcionalnost stranice.