Pregled bibliografske jedinice broj: 886164
Full-Wafer Characterization of AlGaN/GaN HEMTs on Free- Standing CVD Diamond Substrates
Full-Wafer Characterization of AlGaN/GaN HEMTs on Free- Standing CVD Diamond Substrates // IEEE electron device letters, 31 (2010), 2; 99-101 doi:10.1109/LED.2009.2036574 (međunarodna recenzija, članak, znanstveni)
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Naslov
Full-Wafer Characterization of AlGaN/GaN HEMTs on Free- Standing CVD Diamond Substrates
Autori
Chabak, K.D. ; Gillespie, J.K. ; Miller, V. ; Crespo, A. ; Roussos, J. ; Trejo, M. ; Walker, D.E. ; Via, G.D. ; Jessen, G.H. ; Wasserbauer, J. ; Faili, F. ; Babić, Dubravko I. ; Francis, D. ; Ejeckam, F.
Izvornik
IEEE electron device letters (0741-3106) 31
(2010), 2;
99-101
Vrsta, podvrsta i kategorija rada
Radovi u časopisima, članak, znanstveni
Ključne riječi
Aluminum gallium nitride, Gallium nitride, HEMTs, MODFETs, Substrates, Electric variables measurement, Chemical processes, Chemical vapor deposition, Radio frequency
Sažetak
We report on electrical characterization and uniformity measurements of the first conventionally processed AlGaN/GaN high electron mobility transistors (HEMTs) on free-standing chemical-vapor-deposited (CVD) diamond substrate wafers.
Izvorni jezik
Engleski
Citiraj ovu publikaciju:
Časopis indeksira:
- Current Contents Connect (CCC)
- Web of Science Core Collection (WoSCC)
- Science Citation Index Expanded (SCI-EXP)
- SCI-EXP, SSCI i/ili A&HCI
- Scopus