Pregled bibliografske jedinice broj: 886160
High-temperature pulsed operation of InGaAsP/InP surface emitting lasers
High-temperature pulsed operation of InGaAsP/InP surface emitting lasers // IEEE Transactions on electron devices, 38 (1991), 12; 2701-2701 doi:10.1109/16.158721 (međunarodna recenzija, članak, znanstveni)
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Naslov
High-temperature pulsed operation of InGaAsP/InP surface emitting lasers
Autori
Wada, H. ; Babić, Dubravko I. ; Crawford, D.L. ; Dudley, J.J. ; Bowers, J.E. ; Hu, E.L. ; Merz, J.L. ; Miller, B.I. ; Koren, U. ; Young, M.G.
Izvornik
IEEE Transactions on electron devices (0018-9383) 38
(1991), 12;
2701-2701
Vrsta, podvrsta i kategorija rada
Radovi u časopisima, članak, znanstveni
Ključne riječi
Indium phosphide, Vertical cavity surface emitting lasers, Surface emitting lasers, Optical pulses, Temperature, Threshold current, Optical materials, Etching, Chemical lasers, Epitaxial growth
Sažetak
The observation of above- room-temperature pulsed operation of InGaAsP/InP vertical-cavity surface emitting lasers (VCSELs) is reported. Lasing operation was successfully achieved up to temperatures as high as 66 degrees C. The threshold current at 20 degrees C was only 50 mA, which is much lower than that previously reported (150 mA) for VCSELs in this material system. The VCSEL structure is the polyimide-embedded constricted mesa structure with an undercut active layer formed using a selective chemical etchant.
Izvorni jezik
Engleski
Citiraj ovu publikaciju:
Časopis indeksira:
- Current Contents Connect (CCC)
- Web of Science Core Collection (WoSCC)
- SCI-EXP, SSCI i/ili A&HCI
- Scopus