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Pregled bibliografske jedinice broj: 885230

High quantum efficiency and narrow absorption bandwidth of the wafer-fused resonant In0.53Ga0.47As photodetectors

Tan, I-Hising; Dudley, J.J.; Babić, Dubravko I.; Cohen, D.A.; Young, B.D.; Hu, E.L.; Bowers, J.E.; Miller, B.I.; Koren, U.; Young, M.G.
High quantum efficiency and narrow absorption bandwidth of the wafer-fused resonant In0.53Ga0.47As photodetectors // IEEE Photonics Technology Letters, 6 (1994), 7; 811-813 doi:10.1109/68.311462 (međunarodna recenzija, članak, znanstveni)

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Naslov
High quantum efficiency and narrow absorption bandwidth of the wafer-fused resonant In0.53Ga0.47As photodetectors

Autori
Tan, I-Hising ; Dudley, J.J. ; Babić, Dubravko I. ; Cohen, D.A. ; Young, B.D. ; Hu, E.L. ; Bowers, J.E. ; Miller, B.I. ; Koren, U. ; Young, M.G.

Izvornik
IEEE Photonics Technology Letters (1041-1135) 6 (1994), 7; 811-813

Vrsta, podvrsta i kategorija rada
Radovi u časopisima, članak, znanstveni

Ključne riječi
Absorption, Bandwidth, Photodetectors, Mirrors, Gallium arsenide, Dielectrics, Photodiodes, Indium phosphide, Epitaxial layers, Microcavities

Sažetak
We demonstrate greater than 90% quantum efficiency in an In/sub 0.53/Ga/sub 0.47/As photodetector with a thin (900 /spl Aring/) absorbing layer. This was achieved by inserting the In/sub 0.53/Ga/sub 0.47/As/InP epitaxial layer into a microcavity composed of a GaAs/AlAs quarter-wavelength stack (QWS) and a Si/SiO/sub 2/ dielectric mirror. The 900-/spl Aring/-thick In/sub 0.53/Ga/sub 0.47/As layer was wafer fused to a GaAs/AlAs mirror, having nearly 100% power reflectivity. A Si/SiO/sub 2/ dielectric mirror was subsequently deposited onto the wafer-fused photodiode to form an asymmetric Fabry-Perot cavity. The external quantum efficiency and absorption bandwidth for the wafer-fused RCE photodiodes were measured to be 94/spl plusmn/3% and 14 nm, respectively. To our knowledge, these wafer-fused RCE photodetectors have the highest external quantum efficiency and narrowest absorption bandwidth ever reported on the long-wavelength resonant-cavity-enhanced photodetectors.

Izvorni jezik
Engleski



POVEZANOST RADA

Profili:

Avatar Url Dubravko Babić (autor)

Poveznice na cjeloviti tekst rada:

doi ieeexplore.ieee.org

Citiraj ovu publikaciju:

Tan, I-Hising; Dudley, J.J.; Babić, Dubravko I.; Cohen, D.A.; Young, B.D.; Hu, E.L.; Bowers, J.E.; Miller, B.I.; Koren, U.; Young, M.G.
High quantum efficiency and narrow absorption bandwidth of the wafer-fused resonant In0.53Ga0.47As photodetectors // IEEE Photonics Technology Letters, 6 (1994), 7; 811-813 doi:10.1109/68.311462 (međunarodna recenzija, članak, znanstveni)
Tan, I., Dudley, J., Babić, D., Cohen, D., Young, B., Hu, E., Bowers, J., Miller, B., Koren, U. & Young, M. (1994) High quantum efficiency and narrow absorption bandwidth of the wafer-fused resonant In0.53Ga0.47As photodetectors. IEEE Photonics Technology Letters, 6 (7), 811-813 doi:10.1109/68.311462.
@article{article, author = {Tan, I-Hising and Dudley, J.J. and Babi\'{c}, Dubravko I. and Cohen, D.A. and Young, B.D. and Hu, E.L. and Bowers, J.E. and Miller, B.I. and Koren, U. and Young, M.G.}, year = {1994}, pages = {811-813}, DOI = {10.1109/68.311462}, keywords = {Absorption, Bandwidth, Photodetectors, Mirrors, Gallium arsenide, Dielectrics, Photodiodes, Indium phosphide, Epitaxial layers, Microcavities}, journal = {IEEE Photonics Technology Letters}, doi = {10.1109/68.311462}, volume = {6}, number = {7}, issn = {1041-1135}, title = {High quantum efficiency and narrow absorption bandwidth of the wafer-fused resonant In0.53Ga0.47As photodetectors}, keyword = {Absorption, Bandwidth, Photodetectors, Mirrors, Gallium arsenide, Dielectrics, Photodiodes, Indium phosphide, Epitaxial layers, Microcavities} }
@article{article, author = {Tan, I-Hising and Dudley, J.J. and Babi\'{c}, Dubravko I. and Cohen, D.A. and Young, B.D. and Hu, E.L. and Bowers, J.E. and Miller, B.I. and Koren, U. and Young, M.G.}, year = {1994}, pages = {811-813}, DOI = {10.1109/68.311462}, keywords = {Absorption, Bandwidth, Photodetectors, Mirrors, Gallium arsenide, Dielectrics, Photodiodes, Indium phosphide, Epitaxial layers, Microcavities}, journal = {IEEE Photonics Technology Letters}, doi = {10.1109/68.311462}, volume = {6}, number = {7}, issn = {1041-1135}, title = {High quantum efficiency and narrow absorption bandwidth of the wafer-fused resonant In0.53Ga0.47As photodetectors}, keyword = {Absorption, Bandwidth, Photodetectors, Mirrors, Gallium arsenide, Dielectrics, Photodiodes, Indium phosphide, Epitaxial layers, Microcavities} }

Časopis indeksira:


  • Current Contents Connect (CCC)
  • Web of Science Core Collection (WoSCC)
    • SCI-EXP, SSCI i/ili A&HCI
  • Scopus

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