Pregled bibliografske jedinice broj: 885228
Low threshold, wafer fused long wavelength vertical cavity lasers
Low threshold, wafer fused long wavelength vertical cavity lasers // Applied physics letters, 64 (1994), 12; 1463-1465 doi:10.1063/1.111913 (međunarodna recenzija, članak, znanstveni)
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Naslov
Low threshold, wafer fused long wavelength vertical cavity lasers
Autori
Dudley, J.J. ; Babić, Dubravko I. ; Mirin, R. ; Yang, L. ; Miller, B. I. ; Ram, R.J. ; Reynolds, T. ; Hu, E.L. ; Bowers, J.E.
Izvornik
Applied physics letters (0003-6951) 64
(1994), 12;
1463-1465
Vrsta, podvrsta i kategorija rada
Radovi u časopisima, članak, znanstveni
Ključne riječi
III-V semiconductors ; mirrors ; laser resonators ; current density ; electrical properties
Sažetak
We demonstrate electrically injected InGaAsP (1.3 μm) vertical cavity lasers (VCLs) fabricated on GaAs substrates and employing GaAs/AlAs mirrors. The technique of wafer fusion allows for integration of GaAs/AlAs mirrors with InP double heterostructures without degradation of device performance, despite a 3.7% lattice mismatch between the wafers. The wafer fused VCLs have the lowest threshold current (9 mA) and lowest threshold current density (9.5 kA/cm2) and the highest characteristic temperature (T0=67 K) reported to date of any room‐temperature long wavelength VCL.
Izvorni jezik
Engleski
Citiraj ovu publikaciju:
Časopis indeksira:
- Web of Science Core Collection (WoSCC)
- Science Citation Index Expanded (SCI-EXP)
- SCI-EXP, SSCI i/ili A&HCI
- Scopus