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Pregled bibliografske jedinice broj: 884932

Low-threshold, high-temperature pulsed operation of InGaAsP/InP vertical cavity surface emitting lasers

Wada, H.; Babić, Dubravko I.; Crawford, D.L.; Reynolds, T.E.; Dudley, J.J.; Bowers, J.E.; Hu, E.L.; Merz, J.L.; Miller, B.I.; Koren, U.; Young, M.G.
Low-threshold, high-temperature pulsed operation of InGaAsP/InP vertical cavity surface emitting lasers // IEEE photonics technology letters, 3 (1991), 11; 977-979 doi:10.1109/68.97832 (međunarodna recenzija, članak, znanstveni)

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Naslov
Low-threshold, high-temperature pulsed operation of InGaAsP/InP vertical cavity surface emitting lasers

Autori
Wada, H. ; Babić, Dubravko I. ; Crawford, D.L. ; Reynolds, T.E. ; Dudley, J.J. ; Bowers, J.E. ; Hu, E.L. ; Merz, J.L. ; Miller, B.I. ; Koren, U. ; Young, M.G.

Izvornik
IEEE photonics technology letters (1041-1135) 3 (1991), 11; 977-979

Vrsta, podvrsta i kategorija rada
Radovi u časopisima, članak, znanstveni

Ključne riječi
Indium phosphide, Vertical cavity surface emitting lasers, Surface emitting lasers, Etching, Temperature, Threshold current, Optical pulses, Chemical lasers, Gallium arsenide, Electrodes

Sažetak
Room-temperature pulsed operation of InGaAsP (1.3 mu m)/InP vertical cavity surface emitting lasers has been achieved with threshold current as low as 50 mA using a constricted-mesa structure with dielectric mirrors. Above-room- temperature operation has also been realized with a maximum operation temperature of 66 degrees C. Pulsed and continuous-wave threshold currents at 77 K are 1.5 and 3.9 mA, respectively.

Izvorni jezik
Engleski

Napomena
Rad je kao predavanje prezentiran na skupovima: IEEE 49th Annual Device Research Conference, održanom od 17.-19.06.1991.g., Boulder, Colorado, SAD ; uz međunarodnu recenziju objavljen u Zborniku ; str. 1041-1135. ; i IEEE Lasers and Electro-Optics Society 1991 Annual Meeting Digest, održanom 1991.g., San Jose, Kalifornija, SAD.



POVEZANOST RADA

Profili:

Avatar Url Dubravko Babić (autor)

Poveznice na cjeloviti tekst rada:

doi ieeexplore.ieee.org

Citiraj ovu publikaciju:

Wada, H.; Babić, Dubravko I.; Crawford, D.L.; Reynolds, T.E.; Dudley, J.J.; Bowers, J.E.; Hu, E.L.; Merz, J.L.; Miller, B.I.; Koren, U.; Young, M.G.
Low-threshold, high-temperature pulsed operation of InGaAsP/InP vertical cavity surface emitting lasers // IEEE photonics technology letters, 3 (1991), 11; 977-979 doi:10.1109/68.97832 (međunarodna recenzija, članak, znanstveni)
Wada, H., Babić, D., Crawford, D., Reynolds, T., Dudley, J., Bowers, J., Hu, E., Merz, J., Miller, B., Koren, U. & Young, M. (1991) Low-threshold, high-temperature pulsed operation of InGaAsP/InP vertical cavity surface emitting lasers. IEEE photonics technology letters, 3 (11), 977-979 doi:10.1109/68.97832.
@article{article, author = {Wada, H. and Babi\'{c}, Dubravko I. and Crawford, D.L. and Reynolds, T.E. and Dudley, J.J. and Bowers, J.E. and Hu, E.L. and Merz, J.L. and Miller, B.I. and Koren, U. and Young, M.G.}, year = {1991}, pages = {977-979}, DOI = {10.1109/68.97832}, keywords = {Indium phosphide, Vertical cavity surface emitting lasers, Surface emitting lasers, Etching, Temperature, Threshold current, Optical pulses, Chemical lasers, Gallium arsenide, Electrodes}, journal = {IEEE photonics technology letters}, doi = {10.1109/68.97832}, volume = {3}, number = {11}, issn = {1041-1135}, title = {Low-threshold, high-temperature pulsed operation of InGaAsP/InP vertical cavity surface emitting lasers}, keyword = {Indium phosphide, Vertical cavity surface emitting lasers, Surface emitting lasers, Etching, Temperature, Threshold current, Optical pulses, Chemical lasers, Gallium arsenide, Electrodes} }
@article{article, author = {Wada, H. and Babi\'{c}, Dubravko I. and Crawford, D.L. and Reynolds, T.E. and Dudley, J.J. and Bowers, J.E. and Hu, E.L. and Merz, J.L. and Miller, B.I. and Koren, U. and Young, M.G.}, year = {1991}, pages = {977-979}, DOI = {10.1109/68.97832}, keywords = {Indium phosphide, Vertical cavity surface emitting lasers, Surface emitting lasers, Etching, Temperature, Threshold current, Optical pulses, Chemical lasers, Gallium arsenide, Electrodes}, journal = {IEEE photonics technology letters}, doi = {10.1109/68.97832}, volume = {3}, number = {11}, issn = {1041-1135}, title = {Low-threshold, high-temperature pulsed operation of InGaAsP/InP vertical cavity surface emitting lasers}, keyword = {Indium phosphide, Vertical cavity surface emitting lasers, Surface emitting lasers, Etching, Temperature, Threshold current, Optical pulses, Chemical lasers, Gallium arsenide, Electrodes} }

Časopis indeksira:


  • Current Contents Connect (CCC)
  • Web of Science Core Collection (WoSCC)
    • SCI-EXP, SSCI i/ili A&HCI
  • Scopus

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