Pretraga

Pretražite po imenu i prezimenu autora, mentora, urednika, prevoditelja

Napredna pretraga

Pregled bibliografske jedinice broj: 884931

Comparison of GaN HEMTs on Diamond and SiC Substrates

Felbinger, Jonathan G.; Chandra, M.V.S.; Sun, Yunju; Eastman, Lester F.; Wasserbauer, John; Faili, Firooz; Babić, Dubravko; Francis, Daniel; Ejeckam, Felix
Comparison of GaN HEMTs on Diamond and SiC Substrates // IEEE electron device letters, 28 (2007), 11; 948-950 doi:10.1109/LED.2007.908490 (međunarodna recenzija, članak, znanstveni)

CROSBI ID: 884931 Za ispravke kontaktirajte CROSBI podršku putem web obrasca

Naslov
Comparison of GaN HEMTs on Diamond and SiC Substrates

Autori
Felbinger, Jonathan G. ; Chandra, M.V.S. ; Sun, Yunju ; Eastman, Lester F. ; Wasserbauer, John ; Faili, Firooz ; Babić, Dubravko ; Francis, Daniel ; Ejeckam, Felix

Izvornik
IEEE electron device letters (0741-3106) 28 (2007), 11; 948-950

Vrsta, podvrsta i kategorija rada
Radovi u časopisima, članak, znanstveni

Ključne riječi
Gallium nitride, HEMTs, MODFETs, Silicon carbide, Substrates, Thermal conductivity, Aluminum gallium nitride, Temperature, Atomic force microscopy, Epitaxial layers

Sažetak
The performance of AlGaN/GaN high-electron- mobility transistors (HEMTs) on diamond and SiC substrates is examined. We demonstrate GaN-on- diamond transistors with periphery WG = 250 mum, exhibiting ft = 27.4 GHz and yielding a power density of 2.79 W/mm at 10 GHz. Additionally, the temperature rise in similar devices on diamond and SiC substrates is reported. To the best of our knowledge, these represent the highest frequency of operation and first-reported thermal and X -band power measurements of GaN-on-diamond HEMTs.

Izvorni jezik
Engleski



POVEZANOST RADA

Profili:

Avatar Url Dubravko Babić (autor)

Poveznice na cjeloviti tekst rada:

doi ieeexplore.ieee.org

Citiraj ovu publikaciju:

Felbinger, Jonathan G.; Chandra, M.V.S.; Sun, Yunju; Eastman, Lester F.; Wasserbauer, John; Faili, Firooz; Babić, Dubravko; Francis, Daniel; Ejeckam, Felix
Comparison of GaN HEMTs on Diamond and SiC Substrates // IEEE electron device letters, 28 (2007), 11; 948-950 doi:10.1109/LED.2007.908490 (međunarodna recenzija, članak, znanstveni)
Felbinger, J., Chandra, M., Sun, Y., Eastman, L., Wasserbauer, J., Faili, F., Babić, D., Francis, D. & Ejeckam, F. (2007) Comparison of GaN HEMTs on Diamond and SiC Substrates. IEEE electron device letters, 28 (11), 948-950 doi:10.1109/LED.2007.908490.
@article{article, author = {Felbinger, Jonathan G. and Chandra, M.V.S. and Sun, Yunju and Eastman, Lester F. and Wasserbauer, John and Faili, Firooz and Babi\'{c}, Dubravko and Francis, Daniel and Ejeckam, Felix}, year = {2007}, pages = {948-950}, DOI = {10.1109/LED.2007.908490}, keywords = {Gallium nitride, HEMTs, MODFETs, Silicon carbide, Substrates, Thermal conductivity, Aluminum gallium nitride, Temperature, Atomic force microscopy, Epitaxial layers}, journal = {IEEE electron device letters}, doi = {10.1109/LED.2007.908490}, volume = {28}, number = {11}, issn = {0741-3106}, title = {Comparison of GaN HEMTs on Diamond and SiC Substrates}, keyword = {Gallium nitride, HEMTs, MODFETs, Silicon carbide, Substrates, Thermal conductivity, Aluminum gallium nitride, Temperature, Atomic force microscopy, Epitaxial layers} }
@article{article, author = {Felbinger, Jonathan G. and Chandra, M.V.S. and Sun, Yunju and Eastman, Lester F. and Wasserbauer, John and Faili, Firooz and Babi\'{c}, Dubravko and Francis, Daniel and Ejeckam, Felix}, year = {2007}, pages = {948-950}, DOI = {10.1109/LED.2007.908490}, keywords = {Gallium nitride, HEMTs, MODFETs, Silicon carbide, Substrates, Thermal conductivity, Aluminum gallium nitride, Temperature, Atomic force microscopy, Epitaxial layers}, journal = {IEEE electron device letters}, doi = {10.1109/LED.2007.908490}, volume = {28}, number = {11}, issn = {0741-3106}, title = {Comparison of GaN HEMTs on Diamond and SiC Substrates}, keyword = {Gallium nitride, HEMTs, MODFETs, Silicon carbide, Substrates, Thermal conductivity, Aluminum gallium nitride, Temperature, Atomic force microscopy, Epitaxial layers} }

Časopis indeksira:


  • Current Contents Connect (CCC)
  • Web of Science Core Collection (WoSCC)
    • Science Citation Index Expanded (SCI-EXP)
    • SCI-EXP, SSCI i/ili A&HCI
  • Scopus

Citati:

    Altmetrijski pokazatelji:


    Podijeli:





    Contrast
    Increase Font
    Decrease Font
    Dyslexic Font
    CROSBI koristi kolačiće (cookies) kako bi poboljšao funkcionalnost stranice.