Pregled bibliografske jedinice broj: 884782
Refractive indexes of (Al, Ga, In)As epilayers on InP for optoelectronic applications
Refractive indexes of (Al, Ga, In)As epilayers on InP for optoelectronic applications // IEEE Photonics Technology Letters, 4 (1992), 6; 627-630 doi:10.1109/68.141990 (međunarodna recenzija, članak, znanstveni)
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Naslov
Refractive indexes of (Al, Ga, In)As epilayers on InP for optoelectronic applications
Autori
Mondry, M.J. ; Babic, Dubravko I. ; Bowers, J.E. ; Coldren, L.A.
Izvornik
IEEE Photonics Technology Letters (1041-1135) 4
(1992), 6;
627-630
Vrsta, podvrsta i kategorija rada
Radovi u časopisima, članak, znanstveni
Ključne riječi
Refractive index, Indium phosphide, Molecular beam epitaxial growth, Optical waveguides, Superlattices, Lattices, Diffraction, Photoluminescence, Optical reflection, Spectroscopy
Sažetak
Molecular beam epitaxy (MBE)-grown bulk and short-period superlattices of (Al, Ga, In)As epilayers lattice matched to InP were characterized by double-crystal diffractometry and low-temperature photoluminescence. A reflection spectroscopy technique was used to determine the refractive index of (Al, Ga, In)As films as a function of wavelength. The measured data were fitted to a single- oscillator dispersion model, and the model coefficients are given. The resulting expression can be used in the design of waveguides, modulators, and other optical devices.
Izvorni jezik
Engleski
Citiraj ovu publikaciju:
Časopis indeksira:
- Current Contents Connect (CCC)
- Web of Science Core Collection (WoSCC)
- SCI-EXP, SSCI i/ili A&HCI
- Scopus
