Pregled bibliografske jedinice broj: 884778
Isotype heterojunctions with flat valence or conduction band
Isotype heterojunctions with flat valence or conduction band // IEEE Journal of Quantum Electronics, 33 (1997), 12; 2195-2198 doi:10.1109/3.644101 (međunarodna recenzija, članak, znanstveni)
CROSBI ID: 884778 Za ispravke kontaktirajte CROSBI podršku putem web obrasca
Naslov
Isotype heterojunctions with flat valence or conduction band
Autori
Babić, Dubravko I. ; Dohler, G.H. ; Bowers, J.E. ; Hu, E.L.
Izvornik
IEEE Journal of Quantum Electronics (0018-9197) 33
(1997), 12;
2195-2198
Vrsta, podvrsta i kategorija rada
Radovi u časopisima, članak, znanstveni
Ključne riječi
Heterojunctions, Vertical cavity surface emitting lasers, Mirrors, Doping, Epitaxial layers, Distributed Bragg reflectors, Photonic band gap, Power engineering and energy, Voltage, Electrostatics
Sažetak
We show that isotype heterojunctions with a perfectly flat majority or minority carrier band edge can be realized by modulation doping of arbitrary continuous alloy grading. The required impurity distribution is obtained analytically from the knowledge of the compositional grading and band structure parameters in the grading. This analytic relationship is exact for heterojunctions in which the grading fields are negligible in comparison with the atomic fields. We illustrate the design of flat valence-band heterojunctions for application in high- reflectivity low-resistance distributed Bragg reflectors for vertical-cavity lasers. The presented formalism enables the design of isotype heterojunctions with arbitrary band- edge profiles.
Izvorni jezik
Engleski
Citiraj ovu publikaciju:
Časopis indeksira:
- Current Contents Connect (CCC)
- Web of Science Core Collection (WoSCC)
- Science Citation Index Expanded (SCI-EXP)
- SCI-EXP, SSCI i/ili A&HCI
- Scopus
