Pregled bibliografske jedinice broj: 884773
Determination of valence and conduction‐band discontinuities at the (Ga, In) P/GaAs heterojunction by C‐V profiling
Determination of valence and conduction‐band discontinuities at the (Ga, In) P/GaAs heterojunction by C‐V profiling // Journal of applied physics, 61 (1987), 2; 643-649 doi:10.1063/1.338931 (međunarodna recenzija, članak, znanstveni)
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Naslov
Determination of valence and conduction‐band discontinuities at the (Ga, In) P/GaAs heterojunction by C‐V profiling
Autori
Rao, M.A. ; Caine, E.J. ; Kroemer, H. ; Long, S.I. ; Babić, Dubravko I.
Izvornik
Journal of applied physics (0021-8979) 61
(1987), 2;
643-649
Vrsta, podvrsta i kategorija rada
Radovi u časopisima, članak, znanstveni
Ključne riječi
Heterojunctions ; Conduction‐band discontinuities ; C‐V profiles
Sažetak
The valence and conduction band discontinuities for the lattice matched (Ga, In)P/GaAs heterojunction have been determined by capacitance‐voltage (C‐V) profiling. Both p‐p and n‐n heterojunctions were profiled, in order to obtain separate and independent values for both the valence‐band‐edge discontinuity (ΔEv) and the conduction‐band discontinuity (ΔEc). The band lineup is found to be of the straddling type with the valence‐ and conduction‐band discontinuities 0.24 and 0.22 eV, respectively, with an estimated accuracy of ±10 meV. Computer reconstruction of the C‐V profiles was used to check the consistency of the data. The band offset data indicate that the (Ga, In)P/(Al, Ga)As system should be staggered for a certain range of Al compositions.
Izvorni jezik
Engleski
Znanstvena područja
Elektrotehnika
Citiraj ovu publikaciju:
Časopis indeksira:
- Web of Science Core Collection (WoSCC)
- Science Citation Index Expanded (SCI-EXP)
- SCI-EXP, SSCI i/ili A&HCI
- Scopus
