Pretražite po imenu i prezimenu autora, mentora, urednika, prevoditelja

Napredna pretraga

Pregled bibliografske jedinice broj: 879139

A High-Voltage Single-Emitter Reduced-Surface-Field Horizontal Current Bipolar Transistor for BiCMOS Integration


Koričić, Marko; Žilak Josip; Suligoj, Tomislav
A High-Voltage Single-Emitter Reduced-Surface-Field Horizontal Current Bipolar Transistor for BiCMOS Integration // IEEE transactions on electron devices, 64 (2017), 7; 3019-3022 doi:10.1109/TED.2017.2702189 (međunarodna recenzija, članak, znanstveni)


CROSBI ID: 879139 Za ispravke kontaktirajte CROSBI podršku putem web obrasca

Naslov
A High-Voltage Single-Emitter Reduced-Surface-Field Horizontal Current Bipolar Transistor for BiCMOS Integration

Autori
Koričić, Marko ; Žilak Josip ; Suligoj, Tomislav

Izvornik
IEEE transactions on electron devices (0018-9383) 64 (2017), 7; 3019-3022

Vrsta, podvrsta i kategorija rada
Radovi u časopisima, članak, znanstveni

Ključne riječi
BiCMOS technology, high-voltage bipolar transistors, charge sharing, fully depleted collector, reduced-surface-field (RESURF), horizontal current bipolar transistor

Sažetak
A novel high-voltage single-emitter horizontal current bipolar transistor (HCBT) is presented. Breakdown voltage improvement compared to high- speed transistor is obtained with full depletion of the intrinsic collector by using implanted CMOS p-well region. Transistors with BVCEO=10.5 V and fT=15.8 GHz are demonstrated. Higher operating currents can be easily obtained by stretching the emitter length resulting in a flexible physical design of circuits. The transistor is fabricated in 0.18 µm HCBT BiCMOS process flow without the additional process steps and the use of additional lithography masks.

Izvorni jezik
Engleski

Znanstvena područja
Elektrotehnika



POVEZANOST RADA


Projekti:
036-0982904-1642 - Sofisticirane poluvodičke strukture za komunikacijsku tehnologiju (Koričić, Marko, MZO ) ( CroRIS)
HRZZ-IP-2013-11-9006 - Poluvodički elementi visokih performansi za primjene u sklopovima za bežične komunikacije i optičke detektore (HiPerSemi) (Suligoj, Tomislav, HRZZ ) ( CroRIS)

Ustanove:
Fakultet elektrotehnike i računarstva, Zagreb

Profili:

Avatar Url Marko Koričić (autor)

Avatar Url Tomislav Suligoj (autor)

Avatar Url Josip Žilak (autor)

Poveznice na cjeloviti tekst rada:

doi ieeexplore.ieee.org

Citiraj ovu publikaciju:

Koričić, Marko; Žilak Josip; Suligoj, Tomislav
A High-Voltage Single-Emitter Reduced-Surface-Field Horizontal Current Bipolar Transistor for BiCMOS Integration // IEEE transactions on electron devices, 64 (2017), 7; 3019-3022 doi:10.1109/TED.2017.2702189 (međunarodna recenzija, članak, znanstveni)
Koričić, M., Žilak Josip & Suligoj, T. (2017) A High-Voltage Single-Emitter Reduced-Surface-Field Horizontal Current Bipolar Transistor for BiCMOS Integration. IEEE transactions on electron devices, 64 (7), 3019-3022 doi:10.1109/TED.2017.2702189.
@article{article, author = {Kori\v{c}i\'{c}, Marko and Suligoj, Tomislav}, year = {2017}, pages = {3019-3022}, DOI = {10.1109/TED.2017.2702189}, keywords = {BiCMOS technology, high-voltage bipolar transistors, charge sharing, fully depleted collector, reduced-surface-field (RESURF), horizontal current bipolar transistor}, journal = {IEEE transactions on electron devices}, doi = {10.1109/TED.2017.2702189}, volume = {64}, number = {7}, issn = {0018-9383}, title = {A High-Voltage Single-Emitter Reduced-Surface-Field Horizontal Current Bipolar Transistor for BiCMOS Integration}, keyword = {BiCMOS technology, high-voltage bipolar transistors, charge sharing, fully depleted collector, reduced-surface-field (RESURF), horizontal current bipolar transistor} }
@article{article, author = {Kori\v{c}i\'{c}, Marko and Suligoj, Tomislav}, year = {2017}, pages = {3019-3022}, DOI = {10.1109/TED.2017.2702189}, keywords = {BiCMOS technology, high-voltage bipolar transistors, charge sharing, fully depleted collector, reduced-surface-field (RESURF), horizontal current bipolar transistor}, journal = {IEEE transactions on electron devices}, doi = {10.1109/TED.2017.2702189}, volume = {64}, number = {7}, issn = {0018-9383}, title = {A High-Voltage Single-Emitter Reduced-Surface-Field Horizontal Current Bipolar Transistor for BiCMOS Integration}, keyword = {BiCMOS technology, high-voltage bipolar transistors, charge sharing, fully depleted collector, reduced-surface-field (RESURF), horizontal current bipolar transistor} }

Časopis indeksira:


  • Current Contents Connect (CCC)
  • Web of Science Core Collection (WoSCC)
    • Science Citation Index Expanded (SCI-EXP)
    • SCI-EXP, SSCI i/ili A&HCI
  • Scopus


Citati:





    Contrast
    Increase Font
    Decrease Font
    Dyslexic Font