Pregled bibliografske jedinice broj: 878607
Perimeter effects from interfaces in ultra-thin layers deposited on nanometer-deep p+n silicon junctions
Perimeter effects from interfaces in ultra-thin layers deposited on nanometer-deep p+n silicon junctions // Proceedings of the 40th International Convention MIPRO 2017 / Petar Biljanović (ur.).
Rijeka: Hrvatska udruga za informacijsku i komunikacijsku tehnologiju, elektroniku i mikroelektroniku - MIPRO, 2017. str. 80-84 (predavanje, međunarodna recenzija, cjeloviti rad (in extenso), znanstveni)
CROSBI ID: 878607 Za ispravke kontaktirajte CROSBI podršku putem web obrasca
Naslov
Perimeter effects from interfaces in ultra-thin layers deposited on nanometer-deep p+n silicon junctions
Autori
Knežević, Tihomir ; Lis K. Nanver ; Suligoj, Tomislav
Vrsta, podvrsta i kategorija rada
Radovi u zbornicima skupova, cjeloviti rad (in extenso), znanstveni
Izvornik
Proceedings of the 40th International Convention MIPRO 2017
/ Petar Biljanović - Rijeka : Hrvatska udruga za informacijsku i komunikacijsku tehnologiju, elektroniku i mikroelektroniku - MIPRO, 2017, 80-84
ISBN
978-953-323-093-9
Skup
40th International Convention MIPRO 2017 - Microelectronics, Electronics and Electronic Technology (MEET)
Mjesto i datum
Opatija, Hrvatska, 24.05.2017. - 26.05.2017
Vrsta sudjelovanja
Predavanje
Vrsta recenzije
Međunarodna recenzija
Ključne riječi
interface barrier, hole layer, perimeter effects, ultrashallow junctions
Sažetak
Interface states at metal-semiconductor or semiconductor-semiconductor interfaces in ultra-thin layers deposited on nanometer-deep p+n silicon junctions that are contacted by metal, can be beneficial for suppressing the injection of majority carriers from the bulk. The effect is more pronounced as the p+n junction depth becomes smaller and it dominates the electrical characteristics of ultrashallow junctions, as, for example sub-10-nm deep pure boron (PureB) diodes. The properties of the perimeter of such an interface play a critical role in the overall electrical characteristics. In this paper, a TCAD simulation study is described where nanometer-deep p+n junctions have an interface hole-layer that forms an energy barrier at the semiconductor-semiconductor interface. The suppression of bulk electron injection is analyzed with respect to the barrier height and the p+n junction depth. Perimeter effects are investigated by 2D simulations showing a detrimental impact on the parasitic majority carrier injection from the bulk in structures with nanometer deep p+n junctions. Other than employing a guard ring, reduction of the perimeter effects by shifting the position of the metal electrode was considered.
Izvorni jezik
Engleski
Znanstvena područja
Elektrotehnika
POVEZANOST RADA
Projekti:
HRZZ-IP-2013-11-9006 - Poluvodički elementi visokih performansi za primjene u sklopovima za bežične komunikacije i optičke detektore (HiPerSemi) (Suligoj, Tomislav, HRZZ ) ( CroRIS)
Ustanove:
Fakultet elektrotehnike i računarstva, Zagreb
