Naslov
Analysis of Hot Carrier-Induced Degradation of Horizontal Current Bipolar Transistor (HCBT)

Autori
Žilak, Josip ; Koričić, Marko ; Suligoj, Tomislav

Vrsta, podvrsta i kategorija rada
Radovi u zbornicima skupova, cjeloviti rad (in extenso), znanstveni

Izvornik
Proceedings of the 40th International Convention MIPRO 2017 / Biljanović, Petar - Rijeka : Hrvatska udruga za informacijsku i komunikacijsku tehnologiju, elektroniku i mikroelektroniku - MIPRO, 2017, 85-90

Skup
MIPRO 2017 - 40th International Convention ; MEET - Microelectronics, Electronics and Electronic Technology

Mjesto i datum
Opatija, Hrvatska, 22.05.2017. - 26.05.2017

Vrsta sudjelovanja
Predavanje

Vrsta recenzije
Međunarodna recenzija

Ključne riječi
Horizontal Current Bipolar Transistor, hot carriers, hot carrier rate, interface traps, reliability, reverse-bias emitter-base stress, mixed-mode stress, degradation

Sažetak
The relative contribution of the hot electrons and hot holes to the reliability degradation of the Horizontal Current Bipolar Transistor (HCBT) is investigated by TCAD simulations. The base current (IB) degradation, obtained by the reverse-bias emitter-base (EB) and mixed-mode stress measurements, is caused by a hot carrier-induced interface trap generation at silicon-oxide interfaces above and below HCBT's emitter n+ polysilicon region. The simulation analysis is performed on the HCBT structures with different n-collector doping profiles and n-hill silicon sidewall surface treatment. The used lucky electron injection model distinguishes the hot carrier type responsible for the damage and makes it possible to predict the HCBT reliability behavior. It is shown that the majority of traps under the reverse-bias EB stress is located at the top interface and is caused by the hot holes, whereas the hot electrons produce the traps under the mixed-mode stress, located mostly at the bottom interface.

Izvorni jezik
Engleski

Znanstvena područja
Elektrotehnika

POVEZANOST RADA