Pregled bibliografske jedinice broj: 873543
Strain-induced increase of electron mobility in ultra-thin InGaAs-OI MOS transistors
Strain-induced increase of electron mobility in ultra-thin InGaAs-OI MOS transistors // Proceedings of the 3rd Joint EUROSOI-ULIS Conference 2017
Atena, Grčka, 2017. str. 136-139 (predavanje, međunarodna recenzija, cjeloviti rad (in extenso), znanstveni)
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Naslov
Strain-induced increase of electron mobility in ultra-thin InGaAs-OI MOS transistors
Autori
Krivec, Sabina ; Poljak, Mirko ; Suligoj, Tomislav
Vrsta, podvrsta i kategorija rada
Radovi u zbornicima skupova, cjeloviti rad (in extenso), znanstveni
Izvornik
Proceedings of the 3rd Joint EUROSOI-ULIS Conference 2017
/ - , 2017, 136-139
Skup
Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (ULIS) 2017
Mjesto i datum
Atena, Grčka, 03.04.2017. - 05.04.2017
Vrsta sudjelovanja
Predavanje
Vrsta recenzije
Međunarodna recenzija
Ključne riječi
InGaAs-OI ; electron mobility ; strain ; Fermi level pinning ; interface charge ; ultra-thin body
Sažetak
The impact of strain on the electron mobility is investigated in ultra-thin InGaAs-OI channels by combining tight-binding bandstructure simulations, self-consistent Schrodinger-Poisson, and mobility simulations including all relevant scattering mechanisms. Our model shows that strain induced mobility improvement increases with body thickness downscaling, up to 164% in 4 nm-thick InGaAs channels in strong inversion.
Izvorni jezik
Engleski
Znanstvena područja
Elektrotehnika
POVEZANOST RADA
Projekti:
HRZZ-IP-2013-11-9006 - Poluvodički elementi visokih performansi za primjene u sklopovima za bežične komunikacije i optičke detektore (HiPerSemi) (Suligoj, Tomislav, HRZZ ) ( CroRIS)
Ustanove:
Fakultet elektrotehnike i računarstva, Zagreb
