Naslov
The a-Si:H Device Characteristics Degradation Upon the Light Induced Defects

Autori
Gradišnik, Vera ; Jeričević, Željko

Vrsta, podvrsta i kategorija rada
Sažeci sa skupova, sažetak, ostalo

Izvornik
Book of abstracts 3rd EUROREGIONAL WORKSHOP ON PHOTOVOLTAICS & NANOPHOTONICS EUROREG-PV 2016 / Boštjan Glažar - Ljubljana : Laboratory of Photovoltaics and Optoelectronics, Faculty of Electrical Engineering University of Ljubljana, 2016, 21-21

Skup
3rd EUROREGIONAL WORKSHOP ON PHOTOVOLTAICS & NANOPHOTONICS EUROREG-PV 2016

Mjesto i datum
Ljubljana, Slovenija, 21.09.2016. - 23.09.2016

Vrsta sudjelovanja
Predavanje

Vrsta recenzije
Međunarodna recenzija

Ključne riječi
a‐Si:H devices, transient response, OBMPC, low frequency

Sažetak
The transient photocurrent of reverse and forward biased a‐Si:H pin devices to blue light impulses and simultaneous illumination with a blue bias beam of the same intensity have been investigated. The modified optical bias dependence of modulated photocurrent method ‐ OBMPC at low frequency is used to measure the devices responses. The device responses were analysed as a sum of decaying exponential functions using the linear least squares method. The linearization was achieved by successive numerical integration first proposed by Foss. The sum of decaying exponentials is typical response for independent relaxation processes happening in parallel. The interpretation of results leads to estimation of localized states energies in amorphous silicon i‐layer, as well as their influence on photocurrent and capacitance degradation. It is observed that the defect states of i‐layer are distributed around deeper energy levels at reverse bias than at forward bias voltages. Also, the small increase in energies of localized states is observed in region where the capacitance achieves the upper limit close to the built‐in potential. The proposed method can be used to characterize the localized states of the native and light‐induced defect states in a‐Si:H devices and their influence on device performances.

Izvorni jezik
Engleski

Znanstvena područja
Elektrotehnika

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