Naslov
Examination of the InP/InGaAs single-photon avalanche diodes by establishing a new TCAD-based simulation environment

Autori
Knežević, Tihomir ; Suligoj, Tomislav

Vrsta, podvrsta i kategorija rada
Radovi u zbornicima skupova, cjeloviti rad (in extenso), znanstveni

Izvornik
2016 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) / Eberhard Bar, Jurgen Lorenz, Peter Pichler - Nürnberg, 2016, 57-60

ISBN
978-1-5090-0817-9

Skup
2016 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)

Mjesto i datum
Nürnberg, Njemačka, 06.09.2016. - 08.09.2016

Vrsta sudjelovanja
Predavanje

Vrsta recenzije
Međunarodna recenzija

Ključne riječi
transient analysis; InP/InGaAs; SPAD; DCR; PDE; TCAD; simulation environment; process simulations

Sažetak
Computational study of the InP/InGaAs single photon avalanche diode (SPAD) is performed using the additional numerical modeling employed as an extension to the TCAD software. A new simulation environment is employed to model the discrete events such as dark count rate (DCR) and photon detection efficiency (PDE) and is extensively tested for a range of temperatures and 1D structure parameters. DCR for SPAD with diffused Zn p+ region operating at 200 K at 20 % PDE for 1.5 μm wavelength is 30% lower compared to the DCR of structure with box-like p+ region doping. The SPAD structures are also analyzed by transient simulations showing the impact of the external resistors on the response speed of the diodes.

Izvorni jezik
Engleski

Znanstvena područja
Elektrotehnika

POVEZANOST RADA