Pregled bibliografske jedinice broj: 8449
Semiconducting Properties of Surface Films on Tin: Electrochemical Impedance Spectroscopy Studies
Semiconducting Properties of Surface Films on Tin: Electrochemical Impedance Spectroscopy Studies // 47th Annual Meeting of the International Society Electrochemistry : Abstracts / Inzelt, G. (ur.).
Balatonfüred, Mađarska; Veszprém, Mađarska: International Electrochemical Society, 1996. (poster, nije recenziran, sažetak, znanstveni)
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Naslov
Semiconducting Properties of Surface Films on Tin: Electrochemical Impedance Spectroscopy Studies
Autori
Šeruga, Marijan ; Omanović, Saša ; Metikoš-Huković, Mirjana
Vrsta, podvrsta i kategorija rada
Sažeci sa skupova, sažetak, znanstveni
Izvornik
47th Annual Meeting of the International Society Electrochemistry : Abstracts
/ Inzelt, G. - : International Electrochemical Society, 1996
Skup
47th Meeting of ISE
Mjesto i datum
Balatonfüred, Mađarska; Veszprém, Mađarska, 01.09.1996. - 06.09.1996
Vrsta sudjelovanja
Poster
Vrsta recenzije
Nije recenziran
Ključne riječi
tin; duplex oxide films; semiconductor; Mott-Schottky; impedance spectroscopy; XPS; cyclic voltammetry
Sažetak
The semiconducting properties of the duplex surface films grown on tin in citrate buffer solution pH=6 were studied in wide potential and frequency range, by means of electrochemical impedance spectroscopy (EIS), cyclic voltammetry (CV) and X-ray photoelectron spectroscopy (XPS). The results confirmed that different types of films grow at low potentials (inner layer) and high potentials (outer layer). Semiconducting properties were studied in the conditions in which the electronic conductivity of the films prevailed, i.e. on stabilised electrodes. Both films show n-type semiconducting properties and can be accurately described by the band model of solids. Both films follow a Mott-Schottky behaviour ; flat band potentials (E_fb) and donor concentrations (N_D) were estimated. The behaviour of thick films is more complex due to incomplete donor dissociation. Considering the dissociation of donors as an equilibrium reaction, the concentration of conductive electrons is approximately equal to concentration of dissociated donors, n=N_D^+. The equivalent electrical circuits have been proposed for modelling the EIS data.
Izvorni jezik
Engleski
Znanstvena područja
Kemija