Pregled bibliografske jedinice broj: 84146
A Novel Horizontal Current Bipolar Transistor for Vertical BiCMOS Integration
A Novel Horizontal Current Bipolar Transistor for Vertical BiCMOS Integration // Device Research Conference - Conference digest
Santa Barbara (CA), Sjedinjene Američke Države, 2002. str. 89-90 (poster, međunarodna recenzija, cjeloviti rad (in extenso), znanstveni)
CROSBI ID: 84146 Za ispravke kontaktirajte CROSBI podršku putem web obrasca
Naslov
A Novel Horizontal Current Bipolar Transistor for Vertical BiCMOS Integration
Autori
Suligoj, Tomislav ; Biljanović, Petar ; Wang, Kang-L.
Vrsta, podvrsta i kategorija rada
Radovi u zbornicima skupova, cjeloviti rad (in extenso), znanstveni
Izvornik
Device Research Conference - Conference digest
/ - , 2002, 89-90
Skup
Device Research Conference
Mjesto i datum
Santa Barbara (CA), Sjedinjene Američke Države, 24-26.06
Vrsta sudjelovanja
Poster
Vrsta recenzije
Međunarodna recenzija
Ključne riječi
BiCMOS integrated circuits; biplar transistors; slicon on insulator technology
Sažetak
A new Horizontal Current Bipolar Transistor (HCBT), suitable for integration with pillar-like CMOS devices into vertical BiCMOS, is fabricated and characterized. It is processed by a simple technology with only 5 lithography masks, using CMP and etch-back technique for isolation and the reduction of parasitic capacitances, and self-aligned base implantation and polysilicon emitter for optimized doping profiles. The transistors with the cut off frequency - breakdown voltage product of 69.5 GHzV and Early voltage greater than 700 V are obtained.
Izvorni jezik
Engleski
Znanstvena područja
Elektrotehnika
