Pregled bibliografske jedinice broj: 82409
Estimation of Deep Trap Concentration Using Capacitance Voltage Measurements
Estimation of Deep Trap Concentration Using Capacitance Voltage Measurements // Proceedings of MIPRO 2002 / Biljanović, Petar; Skala, Karolj (ur.).
Rijeka: Hrvatska udruga za informacijsku i komunikacijsku tehnologiju, elektroniku i mikroelektroniku - MIPRO, 2002. str. 6-11 (predavanje, međunarodna recenzija, cjeloviti rad (in extenso), znanstveni)
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Naslov
Estimation of Deep Trap Concentration Using Capacitance Voltage Measurements
Autori
Divković-Pukšec, Julijana ; Suligoj, Tomislav
Vrsta, podvrsta i kategorija rada
Radovi u zbornicima skupova, cjeloviti rad (in extenso), znanstveni
Izvornik
Proceedings of MIPRO 2002
/ Biljanović, Petar; Skala, Karolj - Rijeka : Hrvatska udruga za informacijsku i komunikacijsku tehnologiju, elektroniku i mikroelektroniku - MIPRO, 2002, 6-11
Skup
MIPRO 2000, 25th International Convention
Mjesto i datum
Opatija, Hrvatska, 20.05.2002. - 24.05.2002
Vrsta sudjelovanja
Predavanje
Vrsta recenzije
Međunarodna recenzija
Ključne riječi
deep impurity; depletion layer capacitance
Sažetak
It is experimentally observed that the capacitance of a reverse biased pn junction is frequency dependent if such a junction has a certain amount of a deep impurity. This effect is described in literature, and a simple model of a depletion layer capacitance as a function of a deep impurity is derived. In this model a shallow and deep impurities are of the opposite types. Here, we have the deep impurity of the same type as the shallow impurity. The existing model was adapted to our situation and used in this work. According to the experimentally obained values of depletion layer capacitance as a function of a reverse bias and frequency the presence of a deep trap is proved, and its concentration is estimated.
Izvorni jezik
Engleski
Znanstvena područja
Elektrotehnika
