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Pregled bibliografske jedinice broj: 82407

Efficient Monte Carlo Simulation of Tunnel Currents in MOS Structures

Grgec, Dalibor; Vexler, M.I.; Jungemann, C.; Meinerzhagen, B.
Efficient Monte Carlo Simulation of Tunnel Currents in MOS Structures // Proceedings of the ESSDERC 2002 / Baccarani, G.; Gnani, E.; Rudan, M. (ur.).
Bolonja: Alma Mater Studiorum Università di Bologna, 2002. str. 179-182 (predavanje, međunarodna recenzija, cjeloviti rad (in extenso), znanstveni)

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Naslov
Efficient Monte Carlo Simulation of Tunnel Currents in MOS Structures

Autori
Grgec, Dalibor ; Vexler, M.I. ; Jungemann, C. ; Meinerzhagen, B.

Vrsta, podvrsta i kategorija rada
Radovi u zbornicima skupova, cjeloviti rad (in extenso), znanstveni

Izvornik
Proceedings of the ESSDERC 2002 / Baccarani, G.; Gnani, E.; Rudan, M. - Bolonja : Alma Mater Studiorum Università di Bologna, 2002, 179-182

Skup
32nd European Solid-State Device Research Conference

Mjesto i datum
Firenca, Italija, 24.09.2002. - 26.09.2002

Vrsta sudjelovanja
Predavanje

Vrsta recenzije
Međunarodna recenzija

Ključne riječi
Monte Carlo simulation; tunnel currents; carrier density; local density approximation

Sažetak
In this paper, a new efficient model for the evaluation of tunnel currents in MOS struactures for Monte Carlo device simulation is presented. Several methods for tunneling probability calculation can be used and the model has the important advantage of being compatible with the modified local density approximation for quantum correction of the carrier density. Implementation of the model in a Monte Carlo device simulaton is explained. Simulations of test MOSFETs and comparisons with measurements are presented.

Izvorni jezik
Engleski

Znanstvena područja
Elektrotehnika



POVEZANOST RADA

Projekti:
0036001

Ustanove:
Fakultet elektrotehnike i računarstva, Zagreb

Profili:

Avatar Url Dalibor Grgec (autor)

Citiraj ovu publikaciju:

Grgec, Dalibor; Vexler, M.I.; Jungemann, C.; Meinerzhagen, B.
Efficient Monte Carlo Simulation of Tunnel Currents in MOS Structures // Proceedings of the ESSDERC 2002 / Baccarani, G.; Gnani, E.; Rudan, M. (ur.).
Bolonja: Alma Mater Studiorum Università di Bologna, 2002. str. 179-182 (predavanje, međunarodna recenzija, cjeloviti rad (in extenso), znanstveni)
Grgec, D., Vexler, M., Jungemann, C. & Meinerzhagen, B. (2002) Efficient Monte Carlo Simulation of Tunnel Currents in MOS Structures. U: Baccarani, G., Gnani, E. & Rudan, M. (ur.)Proceedings of the ESSDERC 2002.
@article{article, author = {Grgec, Dalibor and Vexler, M.I. and Jungemann, C. and Meinerzhagen, B.}, year = {2002}, pages = {179-182}, keywords = {Monte Carlo simulation, tunnel currents, carrier density, local density approximation}, title = {Efficient Monte Carlo Simulation of Tunnel Currents in MOS Structures}, keyword = {Monte Carlo simulation, tunnel currents, carrier density, local density approximation}, publisher = {Alma Mater Studiorum Universit\`{a} di Bologna}, publisherplace = {Firenca, Italija} }
@article{article, author = {Grgec, Dalibor and Vexler, M.I. and Jungemann, C. and Meinerzhagen, B.}, year = {2002}, pages = {179-182}, keywords = {Monte Carlo simulation, tunnel currents, carrier density, local density approximation}, title = {Efficient Monte Carlo Simulation of Tunnel Currents in MOS Structures}, keyword = {Monte Carlo simulation, tunnel currents, carrier density, local density approximation}, publisher = {Alma Mater Studiorum Universit\`{a} di Bologna}, publisherplace = {Firenca, Italija} }

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