Naslov
Impact of the Emitter Polysilicon Thickness on the Performance of High-Linearity Mixers with Horizontal Current Bipolar Transistors

Autori
Žilak, Josip ; Koričić, Marko ; Mochizuki, Hidenori ; Morita, So-ichi ; Suligoj, Tomislav

Vrsta, podvrsta i kategorija rada
Radovi u zbornicima skupova, cjeloviti rad (in extenso), znanstveni

Izvornik
Proceedings of the 39th International Convention MIPRO 2016 / Biljanović, Petar - Rijeka : Hrvatska udruga za informacijsku i komunikacijsku tehnologiju, elektroniku i mikroelektroniku - MIPRO, 2016, 40-44

Skup
MIPRO 2016 - 39th International Convention ; MEET - Microelectronics, Electronics and Electronic Technology

Mjesto i datum
Opatija, Hrvatska, 30.05.2016. - 03.06.2016

Vrsta sudjelovanja
Predavanje

Vrsta recenzije
Međunarodna recenzija

Ključne riječi
Horizontal Current Bipolar Transistor ; emitter polysilicon ; mixer ; linearity ; conversion gain

Sažetak
The impact of the emitter polysilicon etching in Tetramethyl Ammonium Hydroxide (TMAH) on the characteristics of high-linearity mixers fabricated with the low-cost Horizontal Current Bipolar Transistor (HCBT) is analyzed. During emitter formation, the thick layer of a-Si is deposited over the whole wafer, which is then etched-back in the TMAH. The emitter thickness depends on the TMAH etching time and impacts the HCBT's electrical characteristics. Active down-converting mixers with open-collector topology based on Gilbert cell are fabricated with two types of HCBTs with different TMAH etching time using the lowest-cost HCBT technology with CMOS n-well region for n-collector. Measurements of mixers' characteristics are done on-wafer by using the multi-contact probes. The mixers achieve maximum IIP3 of 20.2 dBm and conversion gain of 4 dB. Differences in performance characteristics between two mixer types are small indicating that HCBT's circuit performance sensitivity on the emitter thickness variations is relatively small.

Izvorni jezik
Engleski

Znanstvena područja
Elektrotehnika

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