Pregled bibliografske jedinice broj: 82322
An approach to the problem of the displacement energy threshold in semiconductors
An approach to the problem of the displacement energy threshold in semiconductors // Physica status solidi. B, Basic research, 83 (1977), 1; K41-K44 doi:10.1002/pssb.2220830150 (međunarodna recenzija, članak, znanstveni)
CROSBI ID: 82322 Za ispravke kontaktirajte CROSBI podršku putem web obrasca
Naslov
An approach to the problem of the displacement energy threshold in semiconductors
Autori
Desnica, Uroš ; Urli, Natko
Izvornik
Physica status solidi. B, Basic research (0370-1972) 83
(1977), 1;
K41-K44
Vrsta, podvrsta i kategorija rada
Radovi u časopisima, članak, znanstveni
Ključne riječi
atom displacement ; energy treshold
Sažetak
The results of calculations of the mean displacement energy of all the most important III-V, II-VI, and elemental (group IV) semiconductors based on the theory of the formation of simple defects in semiconductors, which has been elaborated by Van Vechten (1974-77), are presented. The theory is based on thermodynamic arguments, the dielectric two-band model, and macroscopic lattice distortion measurements (10 References).
Izvorni jezik
Engleski
Znanstvena područja
Fizika
POVEZANOST RADA
Ustanove:
Institut "Ruđer Bošković", Zagreb
Citiraj ovu publikaciju:
Časopis indeksira:
- Web of Science Core Collection (WoSCC)
- Science Citation Index Expanded (SCI-EXP)
- SCI-EXP, SSCI i/ili A&HCI
- Scopus
