Naslov
Light induced defects in amorhous silicon thin films

Autori
Pivac, Branko ; Pavlović, Mladen ; Kovačević, Ivana ; Etlinger, Božidar ; Zulim, Ivan

Vrsta, podvrsta i kategorija rada
Sažeci sa skupova, sažetak, znanstveni

Izvornik
JVC-9 9th Joint Vacuum Conference Final programme and book of abstracts / Leisch, M. ; Winkler, A. - Graz : HTU GmbH, Graz University of Technology, 2002, 79-79

Skup
JVC-9 9th Joint Vacuum Conference

Mjesto i datum
Leibnitz, Austrija, 16.06.2002. - 20.06.2002

Vrsta sudjelovanja
Poster

Vrsta recenzije
Međunarodna recenzija

Ključne riječi
light induced defects; amorphous silicon; thin films
(ight induced defects; amorphous silicon; thin films)

Sažetak
The effect of light soakink on a a-Si:H films is well known as Staebler-Wronski effect, though its complete mechanism is not clear yet. We have studied the effect of light soaking with UV, white and sub-gap light on intrinsic a-Si:H films, as well as the effect of thermal annealing in the dark. It is shown that the light soaking of the films in the air did not affect the hydrogen concentrationfrom Si-H bonds and at the same time oxidation of the films is observed. It means that oxygen incorporation was due to broken backbonds to Si-H which are very likely weak bonds. Moreover it is found that while subgap irradiation did not produce oxidation white and UV light did, while UV light caused even minor Si-H bonds breaking. Vacuum annealing at 100 C in the dark on the other hand caused hydrogen redistribution enhancing thus the Si-H bond concentrationand recovering the broken bonds.

Izvorni jezik
Engleski

Znanstvena područja
Fizika

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