Naslov
On the hole effective mass and the free hole statistics in the wurtzite GaN

Autori
Šantić, Branko

Izvornik
SEMICONDUCTOR SCIENCE AND TECHNOLOGY (0268-1242) 18 (2003); 219-224

Vrsta, podvrsta i kategorija rada
Radovi u časopisima, članak, znanstveni

Ključne riječi
GaN; semiconductors; statistics; hole; effective-mass; transport; p-type

Sažetak
Influences of the band splitting and band anisotropy on the statistics of free holes and on the electrical transport in p-type GaN are studied. Published experimental results for the hole effective mass are spanned over a wide range mh=0.3-2.2mo. Based on the theoretical data, the reliable values of the pertinent effective masses are determined. The distribution of free holes among the three closely spaced valence bands is examined. Around room temperature, the density-of-states effective mass is calculated to be mh3ds=1.25mo. Depending on the direction of electrical current, the roles of different valence bands are distinctive. The holes from the A-band are prevailing in the transversal direction. However, the holes from the C-band dominate the transport along the c-direction, although their relative concentration is the smallest. This effect could play a role in the optoelectronic devices.

Izvorni jezik
Engleski

Znanstvena područja
Fizika

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