Naslov
Nano-structural properties of amorphous hydrogenated silicon - carbon alloys by IBA technique, optical methods and GISAX

Autori
Gracin, Davor ; Jakšić, Milko ; Dubček, Pavo ; Medunić, Zvonko

Vrsta, podvrsta i kategorija rada
Sažeci sa skupova, sažetak, znanstveni

Izvornik
Book of Abstrtacts, JVC-9, Sloss Seggau , Leibnitz by Graz, June 16-20, 2002, / M.Leisch ; A.Winkler - Graz : HTU GmbH, Graz University of technology, 2002

Skup
9th Joint Vacuum Conference

Mjesto i datum
Leibnitz, Austrija, 16.07.2002. - 20.07.2002

Vrsta sudjelovanja
Predavanje

Vrsta recenzije
Međunarodna recenzija

Ključne riječi
amorphous hydrogenated silicn-carbide; ion beam analysis; vibrational spectroscopy; GISAXS

Sažetak
The amorphous hydrogenated silicon carbide thin films, a-Si1-x Cx:H, was deposted by magnetron sputtering with x between 0, 15 and 0, 4 and wide range of hydrogen concentration. The samples were analysed by vibrational spectroscopy (FTIR, Raman), IBA technique (Ion Beam Analysis) which includes RBS (Rutherford Backscattering Spectrometry) and ERDA (Elastic Recoil Detection Analysis) and GISAXS. IBA analysis was used for estimation of composition, using several kinds of ions and energy range in order to enhance the depth and compositional resolution. In particular, attention was paid to the determination of carbon to silicon ratio and hydrogen concentration. The vibrational spectroscopy was performed on standard equipment, using establishing methods for quantitative and qualitative analysis. Combining the IBA and vibrational spectrocopy, the volume contribution of components like silicon iclusions, sillicon carbide and carbon nanocrystalites are estimated. Using this results, assuming that each of component has its own dielectric constant, by using EMA aproximation, the optical response in NIR part of spectra was estimated. These results were compared to measured values enabling the estimation of voids contribution in volume of sample. Assuming that the the most of hydrogen bonded to silicon or carbon is in the cluster form, e.g. decorate the voids surface, the average volume per Si/C ? H bond is estimated. Typical values are from 5-10 A3, corresponding to silicon polyvacancyes.

Izvorni jezik
Engleski

Znanstvena područja
Fizika

POVEZANOST RADA