Naslov
Irradiation effects on polycrystalline silicon

Autori
Borjanović, Vesna ; Kovačević, Ivana ; Zorc, Hrvoje ; Pivac, Branko

Izvornik
Solar Energy Materials and Solar Cells (0927-0248) 72 (2002), 1-4; 183-189

Vrsta, podvrsta i kategorija rada
Radovi u časopisima, članak, znanstveni

Ključne riječi
polycrystalline silicon ; solar cells ; radiation defects ;

Sažetak
Intrinsic point defect population in polycrystalline silicon is of the particular importance due to the influence on the electronic properties of material. A study of intrinsic point defect behavior is additionally complicated due to the interaction with the present impurities and different structural defects. Experiments were performed on EFG polycrystalline silicon material rich with carbon and different structural defects such as dislocations and various grain boundaries. Samples were irradiated with  -rays from a 60Co source to the doses of 300 Mrad to introduce simple point defects into the bulk of the material. The results obtained with DLTS spectroscopy showed that upon formation of the vacancy-interstitial pairs, silicon selfinterstitials get trapped by larger structural defects, creating therefore a vacancy rich bulk of the material.

Izvorni jezik
Engleski

Znanstvena područja
Fizika

Napomena
EMRS 2001 Symposium E: Crystalline Silicon for Solar Cells

POVEZANOST RADA