Pregled bibliografske jedinice broj: 81619
Defects in carbon and oxygen implanted p-type silicon
Defects in carbon and oxygen implanted p-type silicon // Nuclear Instruments & Methods in Physics Research B, 186 (2002), 355-359 doi:10.1016/S0168-583X(01)00917-X (međunarodna recenzija, članak, znanstveni)
CROSBI ID: 81619 Za ispravke kontaktirajte CROSBI podršku putem web obrasca
Naslov
Defects in carbon and oxygen implanted p-type silicon
Autori
Pivac, Branko ; Kovačević, Ivana ; Borjanović, Vesna
Izvornik
Nuclear Instruments & Methods in Physics Research B (0168-583X) 186
(2002);
355-359
Vrsta, podvrsta i kategorija rada
Radovi u časopisima, članak, znanstveni
Ključne riječi
silicon ; ion implantation ; defects ; oxygen ; carbon ; DLTS
Sažetak
Both oxygen and carbon ion implantation are frequently used to form either insulating buried SiO2 or SiC layer for various purposes. This creates a renewal of the interest in defects produced during such implantation processes. In the present paper we report on deep level transient spectroscopy studies of defect states occurring in boron-doped p-type silicon after high dose C+ and CO+ ion implantation and subsequent thermal annealing. It is shown that the predominant defect created during the implantation is in both cases related to silicon selfinterstitial clusters, which upon annealing at higher temperatures evolve to extended structural defects.
Izvorni jezik
Engleski
Znanstvena područja
Fizika
POVEZANOST RADA
Ustanove:
Fakultet elektrotehnike i računarstva, Zagreb,
Institut "Ruđer Bošković", Zagreb
Citiraj ovu publikaciju:
Časopis indeksira:
- Current Contents Connect (CCC)
- Web of Science Core Collection (WoSCC)
- Science Citation Index Expanded (SCI-EXP)
- SCI-EXP, SSCI i/ili A&HCI
- Scopus
