Pregled bibliografske jedinice broj: 804237
Electrical properties of composite silicon thin films
Electrical properties of composite silicon thin films // MIPRO 2015/MEET / Biljanović, Petar ; Butković, Željko (ur.).
Opatija: Hrvatska udruga za informacijsku i komunikacijsku tehnologiju, elektroniku i mikroelektroniku - MIPRO, 2015. str. 25-30 (predavanje, međunarodna recenzija, cjeloviti rad (in extenso), znanstveni)
CROSBI ID: 804237 Za ispravke kontaktirajte CROSBI podršku putem web obrasca
Naslov
Electrical properties of composite silicon thin films
Autori
Tudić, Vladimir
Vrsta, podvrsta i kategorija rada
Radovi u zbornicima skupova, cjeloviti rad (in extenso), znanstveni
Izvornik
MIPRO 2015/MEET
/ Biljanović, Petar ; Butković, Željko - Opatija : Hrvatska udruga za informacijsku i komunikacijsku tehnologiju, elektroniku i mikroelektroniku - MIPRO, 2015, 25-30
Skup
MIPRO 2015 - 38th International Convention ; MEET - Microelectronics, Electronics and Electronic Technology
Mjesto i datum
Opatija, Hrvatska, 28.05.2015. - 29.05.2015
Vrsta sudjelovanja
Predavanje
Vrsta recenzije
Međunarodna recenzija
Ključne riječi
composite ; a-nc-Si:H ; spectroscopy ; CPE ; equivalent circuit
Sažetak
Amorphous-nano-crystalline silicon composite thin films (a-nc-Si:H) samples were synthesized by Plasma Enhanced Chemical Vapor Deposition technique. The electrical properties of thin films and measurement of DC conductivities were accomplished using Dielectric spectroscopy (AC Impedance Spectroscopy) in wide frequency and temperature range. The X-ray diffraction and high resolution electron microscopy measurement showed that films consist of isolated nano-crystals embedded in amorphous matrix. In analysis of impedance data, two approaches were tested: the Debye type equivalent circuit with two paralel R and CPEs (constant phase elements) and modified one, with tree paralel R and CPEs including crystal grain boundary effects. It was found that the later better fits to experimental results properly descibes crystal grains dielectric effect and hydrogen concentration indicating presence of strain. The amorphous matrix showed larger resistance and lower capacity than nano-crystal phase. Also it was found that copmosit silicon thin film cannot be properly descibes by equivalent circuit only with resistors and constant phase elements in serial relation.
Izvorni jezik
Engleski
Znanstvena područja
Fizika, Elektrotehnika, Strojarstvo