Pregled bibliografske jedinice broj: 764839
Impact of different gate insulator materials on the electron mobility in ultra-thin (100) InGaAs-on-insulator MOS devices
Impact of different gate insulator materials on the electron mobility in ultra-thin (100) InGaAs-on-insulator MOS devices // Proceedings of the 38th International Convention MIPRO 2015 / Biljanović, Petar (ur.).
Rijeka, 2015. str. 25-30 (predavanje, međunarodna recenzija, cjeloviti rad (in extenso), znanstveni)
CROSBI ID: 764839 Za ispravke kontaktirajte CROSBI podršku putem web obrasca
Naslov
Impact of different gate insulator materials on the electron mobility in ultra-thin (100) InGaAs-on-insulator MOS devices
Autori
Krivec, Sabina ; Poljak, Mirko ; Suligoj, Tomislav
Vrsta, podvrsta i kategorija rada
Radovi u zbornicima skupova, cjeloviti rad (in extenso), znanstveni
Izvornik
Proceedings of the 38th International Convention MIPRO 2015
/ Biljanović, Petar - Rijeka, 2015, 25-30
ISBN
978-953-233-083-0
Skup
38th International Convention MIPRO 2015 - Microelectronics, Electronics and Electronic Technology (MEET)
Mjesto i datum
Opatija, Hrvatska, 25.05.2015. - 29.05.2015
Vrsta sudjelovanja
Predavanje
Vrsta recenzije
Međunarodna recenzija
Ključne riječi
InGaAs-on-insulator ; ultra-thin body ; mobility ; scattering ; (100) ; SiO2 ; Al2O3 ; HfO2
Sažetak
In this paper, we studied the influence of the parameters of technologically relevant dielectrics (SiO2, Al2O3 and HfO2) and channel thickness downscaling on the electron mobility in InGaAs-on-insulator channels with (100) surface orientation. The study of mobility properties is enabled by a self-consistent Schrödinger-Poisson solver that is coupled with a scattering simulator based on the momentum relaxation time approximation, in order to calculate the scattering rates of electrons with acoustic, optical, remote and polar phonons, surface roughness, Coulomb impurities and alloy disorder. Simulations revealed that SiO2 is the optimum gate dielectric material irrespective of the body thickness, followed by Al2O3 or HfO2, depending on InGaAs-to-oxide surface roughness.
Izvorni jezik
Engleski
Znanstvena područja
Elektrotehnika
POVEZANOST RADA
Projekti:
HRZZ-IP-2013-11-9006 - Poluvodički elementi visokih performansi za primjene u sklopovima za bežične komunikacije i optičke detektore (HiPerSemi) (Suligoj, Tomislav, HRZZ ) ( CroRIS)
Ustanove:
Fakultet elektrotehnike i računarstva, Zagreb
