Naslov
ELECTRONIC STRUCTURE OF STRAINED SILICON LAYERS

Autori
Kovačević, Goran ; Pivac, Branko

Vrsta, podvrsta i kategorija rada
Sažeci sa skupova, sažetak, znanstveni

Izvornik
16th International Conference on Thin Films PROGRAMME AND BOOK OF ABSTRACTS / Radić, Nikola ; Zorc, Hrvoje - Zagreb : Hrvatsko Vakuumsko Društvo (HVD), 2014, 83-83

Skup
16th International Conference on Thin Films

Mjesto i datum
Dubrovnik, Hrvatska, 13.10.2014. - 16.10.2014

Vrsta sudjelovanja
Poster

Vrsta recenzije
Međunarodna recenzija

Ključne riječi
silicon; thin films; molecular dynamics; DFT

Sažetak
Recent research on thin silicon layers, flanked with crystalline silicon oxide, reviled that certain interfaces cause strain in the silicon layer. That strain can be reduced by deformations in the silicon layer. Here we report the influence of deformations of the thin silicon layer on its electronic structure. We used five atomic layers thin slab of silicon, flanked with alpha quartz along [110] surface. The bonding pattern in the interface causes the slab of silicon to buckle. For comparison, the ideal slab of silicon was created by removing silicon oxide layer and replacing it with OH groups. The differences between electronic structures of the ideal and the buckled silicon layer are determined from DFT calculations. Electrical conductivities of ideal and buckled layers of silicon are calculated by using non-equilibrium Green’s function.

Izvorni jezik
Engleski

Znanstvena područja
Fizika

POVEZANOST RADA