Pregled bibliografske jedinice broj: 76066
Selective bong breaking in amorphous hydrogenated silicon by using Duke FEL
Selective bong breaking in amorphous hydrogenated silicon by using Duke FEL // Nuclear Instruments and Methods A, 475 (2001), 635-640 doi:10.1016/S0168-9002(01)01578-9 (međunarodna recenzija, članak, znanstveni)
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Naslov
Selective bong breaking in amorphous hydrogenated silicon by using Duke FEL
Autori
Gracin, Davor ; Vlahović, Branislav ; Borjanović, Vesna ; Sunda-Meya, A. ; Paterson, T. ; Dutta, J. M. ; Hauger, S. ; Pinayev, I. ; Ware, M. E. ; Alexson, D. ; Nemanich, R. J. ; Roedern, B. von
Izvornik
Nuclear Instruments and Methods A (0168-9002) 475
(2001);
635-640
Vrsta, podvrsta i kategorija rada
Radovi u časopisima, članak, znanstveni
Ključne riječi
a-Si:H ; structure ; ordering ; FEL ; recrystallization ; Raman spectroscopy
Sažetak
In order to study the possibility of influencing the phase containing predominantly Si– H bonds, while having minimal influence on the surrounding materials, samples of a-Si were exposed to Duke-FEL Mark III radiation. The wavelength of the radiation was selected to fit the absorption maximum of stretching vibrations of Si– H bonds (5 μ m). By varying the wavelength in the vicinity of 5 μ m, the illumination time and the power density, different types and degrees of structural ordering, of Si– H bonds and Si– Si bonds were obtained, and monitored by Raman spectroscopy. By increasing the energy density, at certain level the crystallization occurs. We were able to demonstrate a direct correlation between short and intermediate range ordering and the wavelength and intensity of the radiation. Using 5 μ m at 10 kW/cm2 leads to increase in structural disordering. However, increasing power to 60 kW/cm2 improves both short and intermediate order in a-Si:H, as demonstrated by Raman spectroscopy. Further increasing power density by an order of magnitude results in crystallization of the sample.
Izvorni jezik
Engleski
Znanstvena područja
Fizika
Napomena
FEL2000: Proc. 22nd Int. Free Electron Laser Conference and 7th F EL Users Workshop
POVEZANOST RADA
Ustanove:
Fakultet elektrotehnike i računarstva, Zagreb,
Institut "Ruđer Bošković", Zagreb
Citiraj ovu publikaciju:
Časopis indeksira:
- Current Contents Connect (CCC)
- Web of Science Core Collection (WoSCC)
- Science Citation Index Expanded (SCI-EXP)
- SCI-EXP, SSCI i/ili A&HCI
- Scopus
Uključenost u ostale bibliografske baze podataka::
- INSPEC