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Pregled bibliografske jedinice broj: 753819

On the enhancement of electron mobility in ultra-thin (111)-oriented In0.53Ga0.47As channels


Poljak, Mirko; Krivec, Sabina; Suligoj, Tomislav
On the enhancement of electron mobility in ultra-thin (111)-oriented In0.53Ga0.47As channels // Proceedings of the First Joint EUROSOI-ULIS Conference 2015 / Palestri, Pierpaolo ; Gnani, Elena (ur.).
Bolonja, 2015. str. 117-120 (predavanje, međunarodna recenzija, cjeloviti rad (in extenso), znanstveni)


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Naslov
On the enhancement of electron mobility in ultra-thin (111)-oriented In0.53Ga0.47As channels

Autori
Poljak, Mirko ; Krivec, Sabina ; Suligoj, Tomislav

Vrsta, podvrsta i kategorija rada
Radovi u zbornicima skupova, cjeloviti rad (in extenso), znanstveni

Izvornik
Proceedings of the First Joint EUROSOI-ULIS Conference 2015 / Palestri, Pierpaolo ; Gnani, Elena - Bolonja, 2015, 117-120

Skup
The First Joint EUROSOI-ULIS Conference 2015

Mjesto i datum
Bologna, Italija, 26.01.2015. - 28.01.2015

Vrsta sudjelovanja
Predavanje

Vrsta recenzije
Međunarodna recenzija

Ključne riječi
InGaAs ; electron mobility ; ultra-thin body ; scattering ; quantum confinement ; semiclassical transport modeling

Sažetak
Electron mobility is investigated in sub-20 nm thick InGaAs channels using self-consistent numerical simulations. Effects of body thickness downscaling [down to 2 nm] and surface orientation [(100) and (111)] are examined by including all electron valleys and all relevant scattering mechanisms. We report that ultra-thin (111) InGaAs channels offer greater electron mobility than (100) devices down to 2 nm. Furthermore, ultra-thin (100) InGaAs devices outperform SOI for body thicknesses above 3.2 nm, while (111) InGaAs channels are superior to SOI irrespective of the body thickness.

Izvorni jezik
Engleski

Znanstvena područja
Elektrotehnika



POVEZANOST RADA


Projekti:
HRZZ-IP-2013-11-9006 - Poluvodički elementi visokih performansi za primjene u sklopovima za bežične komunikacije i optičke detektore (HiPerSemi) (Suligoj, Tomislav, HRZZ ) ( CroRIS)

Ustanove:
Fakultet elektrotehnike i računarstva, Zagreb

Profili:

Avatar Url Sabina Krivec (autor)

Avatar Url Tomislav Suligoj (autor)

Avatar Url Mirko Poljak (autor)


Citiraj ovu publikaciju:

Poljak, Mirko; Krivec, Sabina; Suligoj, Tomislav
On the enhancement of electron mobility in ultra-thin (111)-oriented In0.53Ga0.47As channels // Proceedings of the First Joint EUROSOI-ULIS Conference 2015 / Palestri, Pierpaolo ; Gnani, Elena (ur.).
Bolonja, 2015. str. 117-120 (predavanje, međunarodna recenzija, cjeloviti rad (in extenso), znanstveni)
Poljak, M., Krivec, S. & Suligoj, T. (2015) On the enhancement of electron mobility in ultra-thin (111)-oriented In0.53Ga0.47As channels. U: Palestri, P. & Gnani, E. (ur.)Proceedings of the First Joint EUROSOI-ULIS Conference 2015.
@article{article, author = {Poljak, Mirko and Krivec, Sabina and Suligoj, Tomislav}, year = {2015}, pages = {117-120}, keywords = {InGaAs, electron mobility, ultra-thin body, scattering, quantum confinement, semiclassical transport modeling}, title = {On the enhancement of electron mobility in ultra-thin (111)-oriented In0.53Ga0.47As channels}, keyword = {InGaAs, electron mobility, ultra-thin body, scattering, quantum confinement, semiclassical transport modeling}, publisherplace = {Bologna, Italija} }
@article{article, author = {Poljak, Mirko and Krivec, Sabina and Suligoj, Tomislav}, year = {2015}, pages = {117-120}, keywords = {InGaAs, electron mobility, ultra-thin body, scattering, quantum confinement, semiclassical transport modeling}, title = {On the enhancement of electron mobility in ultra-thin (111)-oriented In0.53Ga0.47As channels}, keyword = {InGaAs, electron mobility, ultra-thin body, scattering, quantum confinement, semiclassical transport modeling}, publisherplace = {Bologna, Italija} }




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