Pregled bibliografske jedinice broj: 74587
Deep Level Defects in Oxygen Doped EFG Poly-Si
Deep Level Defects in Oxygen Doped EFG Poly-Si // Conference Record Of The 28th IEEE Photovoltaic Specialists Conference / Rohatgi, Ajeet (ur.).
Piscataway (NJ): Institute of Electrical and Electronics Engineers (IEEE), 2000. str. 276-279 (predavanje, međunarodna recenzija, cjeloviti rad (in extenso), znanstveni)
CROSBI ID: 74587 Za ispravke kontaktirajte CROSBI podršku putem web obrasca
Naslov
Deep Level Defects in Oxygen Doped EFG Poly-Si
Autori
Pivac, Branko ; Borjanović, V. ; Kovačević, I. ; Zulim, Ivan
Vrsta, podvrsta i kategorija rada
Radovi u zbornicima skupova, cjeloviti rad (in extenso), znanstveni
Izvornik
Conference Record Of The 28th IEEE Photovoltaic Specialists Conference
/ Rohatgi, Ajeet - Piscataway (NJ) : Institute of Electrical and Electronics Engineers (IEEE), 2000, 276-279
Skup
28th IEEE Photovoltaic Specialists Conference
Mjesto i datum
Anchorage (AK), Sjedinjene Američke Države, 15.09.2000. - 22.09.2000
Vrsta sudjelovanja
Predavanje
Vrsta recenzije
Međunarodna recenzija
Ključne riječi
polycrystalline silicon; deep level defects
Sažetak
There is a considerable current interest in polycrystalline silicon and edge-defined film-fed growth (EFG) technique is suitable candidate for low-cost solar cell production. Recently, it has been shown that oxygen addition during the crystal growth yields a higher efficiency solar cells. We studied deep level defects associated with structural defects like dislocations and grain boundaries, and influence of oxygen addition to the bulk on the picture of deep levels in the material. We have shown that levels attributed to dislocations are directily influenced by oxygen addition. We have also found that such levels originate predominantly from grain boundaries and to lesser extent from intragrain regions.
Izvorni jezik
Engleski
Znanstvena područja
Elektrotehnika
POVEZANOST RADA
Projekti:
023052
Ustanove:
Fakultet elektrotehnike, strojarstva i brodogradnje, Split
