Naslov
Examination of Horizontal Current Bipolar Transistor (HCBT) Reliability Characteristics

Autori
Žilak, Josip ; Koričić, Marko ; Mochizuki, Hidenori ; Morita, So-ichi ; Shinomura, Katsumi ; Imai, Hisaya ; Suligoj, Tomislav

Vrsta, podvrsta i kategorija rada
Radovi u zbornicima skupova, cjeloviti rad (in extenso), znanstveni

Izvornik
Proceedings of the 2014 Bipolar/BiCMOS Circuits and Technology Meeting / - : Institute of Electrical and Electronics Engineers (IEEE), 2014, 37-40

ISBN
978-1-4799-7229-6

Skup
Bipolar/BiCMOS Circuits and Technology Meeting

Mjesto i datum
San Diego (CA), Sjedinjene Američke Države; Coronado (CA), Sjedinjene Američke Države, 28.09.2014. - 01.10.2014

Vrsta sudjelovanja
Predavanje

Vrsta recenzije
Međunarodna recenzija

Ključne riječi
Horizontal Current Bipolar Transistor; reliability; reverse emitter-base stress; mixed-mode stress; 1/f noise

Sažetak
The reliability characteristics of HCBT are examined for the first time by employing reverse emitter-base (EB) and mixed-mode stresses. Three HCBT structures with different n-collector doping profiles and different oxide etching parameters before polysilicon deposition are measured, exhibiting different behavior at each stress test. Due to the specific HCBT structure, the traps generation causing IB degradation, occurs at different regions, i.e. at EB pn-junction near both the top and the bottom EB oxide for reverse EB stress and only at the bottom EB oxide for mixed-mode stress, as discovered by TCAD simulations. Pre-deposition oxide etching conditions turned out to be critical for IB degradation after reverse EB stress, whereas the n-collector vertical doping profile mostly impacts the trap generation after the mixed-mode stress. The 1/f noise characteristics also show the highest degradation for HCBT structures with the highest stress damage.

Izvorni jezik
Engleski

Znanstvena područja
Elektrotehnika

POVEZANOST RADA