Pregled bibliografske jedinice broj: 72311
Horizontal Current Bipolar Transistor (HCBT): A New Concept of Silicon Bipolar Transistor Technology
Horizontal Current Bipolar Transistor (HCBT): A New Concept of Silicon Bipolar Transistor Technology // IEEE TRANSACTIONS ON ELECTRON DEVICES, NOVEMBER 2001, 48 (2001), 11; 2551-2554 (međunarodna recenzija, članak, znanstveni)
CROSBI ID: 72311 Za ispravke kontaktirajte CROSBI podršku putem web obrasca
Naslov
Horizontal Current Bipolar Transistor (HCBT):
A New Concept of Silicon Bipolar Transistor
Technology
Autori
Biljanović, Petar ; Suligoj, Tomislav
Izvornik
IEEE TRANSACTIONS ON ELECTRON DEVICES, NOVEMBER 2001 (00189383) 48
(2001), 11;
2551-2554
Vrsta, podvrsta i kategorija rada
Radovi u časopisima, članak, znanstveni
Ključne riječi
Bipolar; HCBT; horizontal; lateral; self-aligned
Sažetak
A new concept of silicon bipolar transistor technology is proposed. The resulting horizontal current bipolar transistor (HCBT) is simulated assuming the 0.25 um technology. The surface of the device is smaller than conventional super-self aligned bipolar transistors. The same doping profile as in known vertical current devices is achieved by simpler technology using single polysilicon layer, without conventional epitaxial and n^+ buried layers and with reduced number of lithography masks and technological steps. The simulated dc and ac characteristics of HCBT are similar to the characteristics of standard SST devices.
Izvorni jezik
Engleski
Znanstvena područja
Elektrotehnika
Citiraj ovu publikaciju:
Časopis indeksira:
- Current Contents Connect (CCC)
- Web of Science Core Collection (WoSCC)
- SCI-EXP, SSCI i/ili A&HCI
