Pregled bibliografske jedinice broj: 71644
Simulation of large-signal behavior of a GaAs low noise amplifier
Simulation of large-signal behavior of a GaAs low noise amplifier // Proceedings of the 10th Mediterranean Electrotechnical Conference MELECON 2000 / Economides, Costas ; Pattichis, Constantinos S. ; Maliotis, Greg (ur.).
Nikozija: Violaris Press Ltd, 2000. str. 193-196 (predavanje, međunarodna recenzija, cjeloviti rad (in extenso), znanstveni)
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Naslov
Simulation of large-signal behavior of a GaAs low noise amplifier
Autori
Barić, Adrijan ; Butković, Željko
Vrsta, podvrsta i kategorija rada
Radovi u zbornicima skupova, cjeloviti rad (in extenso), znanstveni
Izvornik
Proceedings of the 10th Mediterranean Electrotechnical Conference MELECON 2000
/ Economides, Costas ; Pattichis, Constantinos S. ; Maliotis, Greg - Nikozija : Violaris Press Ltd, 2000, 193-196
Skup
10th Mediterranean Electrotechnical Conference MELECON 2000
Mjesto i datum
Limassol, Cipar, 29.05.2000. - 31.05.2000
Vrsta sudjelovanja
Predavanje
Vrsta recenzije
Međunarodna recenzija
Ključne riječi
GaAs; low noise amplifier; large signal behavior
Sažetak
This paper investigates the linearity of a GaAs MESFET amplifier. A two-stage low noise amplifier is analyzed by PSPICE. The large-signal S parameters are determined for different load conditions, i.e. a resistive load, an active self-biased load and a cascode configuration. Additionally, the linearity is described in terms of two-tone intermodulation products of the 3rd and 5th order, as well as the 3rd order intercept point (IP3).
Izvorni jezik
Engleski
Znanstvena područja
Elektrotehnika
