Naslov
Electrothermal Model of a Built-in Power MOSFET Diode

Autori
Šunde, Viktor ; Butković, Željko ; Benčić, Zvonko

Vrsta, podvrsta i kategorija rada
Radovi u zbornicima skupova, cjeloviti rad (in extenso), znanstveni

Izvornik
24th International Convention & 10th International Conference on] Microelectronics, Electronics and Electronic Technologies (MEET) & 7th International Conference on Multimedia and Hypermedia Systems (MHS) : proceedings conferences MIPRO 2001 / Biljanović, Petar ; Skala, Karolj - Rijeka : Hrvatska udruga za informacijsku i komunikacijsku tehnologiju, elektroniku i mikroelektroniku - MIPRO, 2001

ISBN
9536042797

Skup
Međunarodni skup MIPRO (24 ; 2001)

Mjesto i datum
Opatija, Hrvatska, 21.05.2001. - 25.05.2001

Vrsta sudjelovanja
Predavanje

Vrsta recenzije
Međunarodna recenzija

Ključne riječi
electrothermal model; built-in diode; model parameters; MEDICI two-dimensional device simulator

Sažetak
Catalogs cite forward characteristics of built-in power MOSFET diode on assumption that silicon temperature is constant. In fact, the silicon temperature is not constant, it is changing due both to the built-in diode's own losses and those of the MOSFET. An electrothermal model was developed for the built-in diode which calculates the static and dynamic characteristics of the diode by taking into account the heating effect. Model's parameters were calculated from the catalog data. The accuracy of the model was checked with a MEDICI two-dimensional device simulator. On comparison, the results have revealed that the method based on electrothermal model yields conservative results.

Izvorni jezik
Engleski

Znanstvena područja
Elektrotehnika

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