Pregled bibliografske jedinice broj: 70826
Deep level defects in oxygen doped EFG poly-Si
Deep level defects in oxygen doped EFG poly-Si // Proceedings of 28th IEEE Photovoltaic Specialist Conference
Anchorage (AK): Institute of Electrical and Electronics Engineers (IEEE), 2000. str. 276-279 (poster, međunarodna recenzija, cjeloviti rad (in extenso), znanstveni)
CROSBI ID: 70826 Za ispravke kontaktirajte CROSBI podršku putem web obrasca
Naslov
Deep level defects in oxygen doped EFG poly-Si
Autori
Pivac, B. ; Borjanović, V. ; Kovačević, I. ; Zulim, I.
Vrsta, podvrsta i kategorija rada
Radovi u zbornicima skupova, cjeloviti rad (in extenso), znanstveni
Izvornik
Proceedings of 28th IEEE Photovoltaic Specialist Conference
/ - Anchorage (AK) : Institute of Electrical and Electronics Engineers (IEEE), 2000, 276-279
Skup
28th IEEE Photovoltaic Specialist Conference-2000
Mjesto i datum
Anchorage (AK), Sjedinjene Američke Države, 15.09.2000. - 22.09.2000
Vrsta sudjelovanja
Poster
Vrsta recenzije
Međunarodna recenzija
Ključne riječi
oxygen doped EFG poly-Si
Sažetak
There is a considerable current interest in polycrystalline silicon and edge-defined film-fed growth (EFG) technique is suitable candidate for the low-cost solar cell production. Recently, it has been shown that oxygen addition during the crystal growth yields a higher efficiency solar cells. We studied deep levels associated with structural defects like dislocations and grain boundaries, and influence of oxygen addition to the bulk on the picture of deep levels in the material. We have shown that levels attributed to dislocations are directily influenced by oxygen addition. We have also found that such levels originate predominantly from grain boundaries and to lesser extent from intragrain regions.
Izvorni jezik
Engleski
Znanstvena područja
Fizika
POVEZANOST RADA
Projekti:
00980301
Ustanove:
Fakultet elektrotehnike i računarstva, Zagreb,
Institut "Ruđer Bošković", Zagreb
