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Pregled bibliografske jedinice broj: 704588

Resistance Fluctuations in GaAs Nanowire Grids


Marasović, Ivan; Milanović, Željka; Betti, Tihomir
Resistance Fluctuations in GaAs Nanowire Grids // Journal of nanomaterials, 2014 (2014), 428390-1 doi:10.1155/2014/428390 (međunarodna recenzija, članak, znanstveni)


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Naslov
Resistance Fluctuations in GaAs Nanowire Grids

Autori
Marasović, Ivan ; Milanović, Željka ; Betti, Tihomir

Izvornik
Journal of nanomaterials (1687-4110) 2014 (2014); 428390-1

Vrsta, podvrsta i kategorija rada
Radovi u časopisima, članak, znanstveni

Ključne riječi
GaAs nanowire ; nanowire device ; light sensing ; resistance fluctuations ; BHP distribution

Sažetak
We present a numerical study on resistance fluctuations in a series of nanowire-based grids. Each grid is made of GaAs nanowires arranged in parallel with metallic contacts crossing all nanowires perpendicularly. Electrical properties of GaAs nanowires known from previous experimental research are used as input parameters in the simulation procedure. Due to the nonhomogeneous doping, the resistivity changes along nanowire. Allowing two possible nanowire orientations (“upwards” or “downwards”), the resulting grid is partially disordered in vertical direction which causes resistance fluctuations. The system is modeled using a two-dimensional random resistor network. Transfer-matrix computation algorithm is used to calculate the total network resistance. It is found that probability density function (PDF) of resistance fluctuations for a series of nanowire grids changes from Gaussian behavior towards the Bramwell-Holdsworth-Pinton distribution when both nanowire orientations are equally represented in the grid.

Izvorni jezik
Engleski

Znanstvena područja
Fizika, Elektrotehnika



POVEZANOST RADA


Ustanove:
Fakultet elektrotehnike, strojarstva i brodogradnje, Split,
Tehnički fakultet, Rijeka

Profili:

Avatar Url Tihomir Betti (autor)

Avatar Url Željka Tomasović (autor)

Avatar Url Ivan Marasović (autor)

Poveznice na cjeloviti tekst rada:

doi www.hindawi.com dx.doi.org

Citiraj ovu publikaciju:

Marasović, Ivan; Milanović, Željka; Betti, Tihomir
Resistance Fluctuations in GaAs Nanowire Grids // Journal of nanomaterials, 2014 (2014), 428390-1 doi:10.1155/2014/428390 (međunarodna recenzija, članak, znanstveni)
Marasović, I., Milanović, Ž. & Betti, T. (2014) Resistance Fluctuations in GaAs Nanowire Grids. Journal of nanomaterials, 2014, 428390-1 doi:10.1155/2014/428390.
@article{article, author = {Marasovi\'{c}, Ivan and Milanovi\'{c}, \v{Z}eljka and Betti, Tihomir}, year = {2014}, pages = {428390-1-428390-9}, DOI = {10.1155/2014/428390}, keywords = {GaAs nanowire, nanowire device, light sensing, resistance fluctuations, BHP distribution}, journal = {Journal of nanomaterials}, doi = {10.1155/2014/428390}, volume = {2014}, issn = {1687-4110}, title = {Resistance Fluctuations in GaAs Nanowire Grids}, keyword = {GaAs nanowire, nanowire device, light sensing, resistance fluctuations, BHP distribution} }
@article{article, author = {Marasovi\'{c}, Ivan and Milanovi\'{c}, \v{Z}eljka and Betti, Tihomir}, year = {2014}, pages = {428390-1-428390-9}, DOI = {10.1155/2014/428390}, keywords = {GaAs nanowire, nanowire device, light sensing, resistance fluctuations, BHP distribution}, journal = {Journal of nanomaterials}, doi = {10.1155/2014/428390}, volume = {2014}, issn = {1687-4110}, title = {Resistance Fluctuations in GaAs Nanowire Grids}, keyword = {GaAs nanowire, nanowire device, light sensing, resistance fluctuations, BHP distribution} }

Časopis indeksira:


  • Current Contents Connect (CCC)
  • Web of Science Core Collection (WoSCC)
    • Science Citation Index Expanded (SCI-EXP)
    • SCI-EXP, SSCI i/ili A&HCI
  • Scopus


Uključenost u ostale bibliografske baze podataka::


  • Biological Sciences
  • Compendex (EI Village)
  • INSPEC


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