Pregled bibliografske jedinice broj: 699498
Phonon-limited hole mobility in sub-20 nm-thick double-gate germanium MOSFETs
Phonon-limited hole mobility in sub-20 nm-thick double-gate germanium MOSFETs // Proceedings of the 37th International Convention MIPRO / Biljanović, Petar (ur.).
Rijeka, 2014. str. 45-50 (predavanje, međunarodna recenzija, cjeloviti rad (in extenso), znanstveni)
CROSBI ID: 699498 Za ispravke kontaktirajte CROSBI podršku putem web obrasca
Naslov
Phonon-limited hole mobility in sub-20 nm-thick double-gate germanium MOSFETs
Autori
Ivanić, Vedran ; Poljak, Mirko ; Suligoj, Tomislav
Vrsta, podvrsta i kategorija rada
Radovi u zbornicima skupova, cjeloviti rad (in extenso), znanstveni
Izvornik
Proceedings of the 37th International Convention MIPRO
/ Biljanović, Petar - Rijeka, 2014, 45-50
ISBN
978-953-233-078-6
Skup
37th International Convention MIPRO
Mjesto i datum
Opatija, Hrvatska, 26.05.2014. - 30.05.2014
Vrsta sudjelovanja
Predavanje
Vrsta recenzije
Međunarodna recenzija
Ključne riječi
ultra-thin body; germanium; MOSFET; hole mobility; quantum confinement; scattering
Sažetak
Physics-based modeling of hole mobilities in ultra-thin germanium layers is calculated with self-consistent Schödinger-Poisson solver and Kubo-Greenwood formula. Quantum confinement is taken into account for heavy, light and split-off hole band in a double-gate germanium MOSFET structure. Acoustic and optical phonon scattering is taken into consideration in the calculation of hole momentum relaxation time. The observed reduction of mobility in thinner layers is explained by examining the influence of fieldinduced and geometry-induced confinement. Contributions from different hole bands are investigated by calculating band population and respective band mobilities.
Izvorni jezik
Engleski
Znanstvena područja
Elektrotehnika
POVEZANOST RADA
Projekti:
036-0361566-1567 - Nanometarski elektronički elementi i sklopovske primjene (Suligoj, Tomislav, MZO ) ( CroRIS)
Ustanove:
Fakultet elektrotehnike i računarstva, Zagreb
