Pregled bibliografske jedinice broj: 699496
Comparison of RF performance between 20 nm-gate bulk and SOI FinFET
Comparison of RF performance between 20 nm-gate bulk and SOI FinFET // Proceedings of the 37th International Convention MIPRO / Biljanović, Petar (ur.).
Rijeka, 2014. str. 51-56 (predavanje, međunarodna recenzija, cjeloviti rad (in extenso), znanstveni)
CROSBI ID: 699496 Za ispravke kontaktirajte CROSBI podršku putem web obrasca
Naslov
Comparison of RF performance between 20 nm-gate bulk and SOI FinFET
Autori
Krivec, Sabina ; Prgić, Hrvoje ; Poljak, Mirko ; Suligoj, Tomislav
Vrsta, podvrsta i kategorija rada
Radovi u zbornicima skupova, cjeloviti rad (in extenso), znanstveni
Izvornik
Proceedings of the 37th International Convention MIPRO
/ Biljanović, Petar - Rijeka, 2014, 51-56
ISBN
978-953-233-078-6
Skup
37th International Convention MIPRO
Mjesto i datum
Opatija, Hrvatska, 26.05.2014. - 30.05.2014
Vrsta sudjelovanja
Predavanje
Vrsta recenzije
Međunarodna recenzija
Ključne riječi
FinFET ; bulk ; SOI ; RF performance ; cut-off frequency
Sažetak
Due to their 3D architecture, FinFETs exhibit a strong dependence of RF figures-of-merit on device geometry due to large extrinsic resistances and capacitances. We analyze the RF performance of 20-nm gate length FinFETs implemented on either bulk or SOI substrate by using 3D numerical device simulation. SOI and bulk FinFET are compared in terms of cut-off and maximum oscillation frequency, gate capacitance and trans-conductance. We have proposed and investigated the influence of different doping methods that aim at improving the RF figures-of-merit of 20 nm bulk FinFETs while maintaining acceptable DC performance.
Izvorni jezik
Engleski
Znanstvena područja
Elektrotehnika
POVEZANOST RADA
Projekti:
036-0361566-1567 - Nanometarski elektronički elementi i sklopovske primjene (Suligoj, Tomislav, MZO ) ( CroRIS)
Ustanove:
Fakultet elektrotehnike i računarstva, Zagreb
