Pregled bibliografske jedinice broj: 68371
Structural ordering of a-Si:H thin films by laser annealing
Structural ordering of a-Si:H thin films by laser annealing // ... / . (ur.).
Baton Rouge (LA), 1999. (ostalo, međunarodna recenzija, sažetak, znanstveni)
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Naslov
Structural ordering of a-Si:H thin films by laser annealing
Autori
A.Sunda-Meya, D.Gracin, J.M.Dutta, V.Borjanovic, B.Vlahovic and R.J.Nemanich
Vrsta, podvrsta i kategorija rada
Sažeci sa skupova, sažetak, znanstveni
Izvornik
...
/ . - Baton Rouge (LA), 1999
Skup
NREL renewable energy academic partnership (REAP) meeting
Mjesto i datum
Baton Rouge (LA), Sjedinjene Američke Države, 08.08.1999. - 13.08.1999
Vrsta sudjelovanja
Ostalo
Vrsta recenzije
Međunarodna recenzija
Ključne riječi
cw laser annealing; amorphous silicon; Raman spectroscopy
Sažetak
The amorphous hydrogenated thin films, deposited on mono crystalline and glass substrate by hot wire deposition and magnetron sputtering, were annealed by Ar-ion laser radiations. The structural properties of the deposited and annealed films were examined by Raman spectroscopy (ISA U-1000 spectrometer supplied by water-cooled photomultplier). The samples were annealed by focusing thelaser beam to a spot with an average size of 5 micro m. the laser power was increased until crystallization occured. The size of micro-crystallites was estimated from the frequency of TO phonon peak and the temperature of irradiated area was determined from the ratio of Stokes and Anti-Stokes intensities of Raman spectra. The analysis of TO-like phonon peak is used to indicate different degrees of silicon matrix ordering, depending on the deposition conditions and hydrogen concentration.
Izvorni jezik
Engleski
Znanstvena područja
Fizika