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Pregled bibliografske jedinice broj: 67933

Quantitative analysis of a-Si1-xCx thin films


D.Gracin, M.Jakšić, C.Yang, V.Borjanović, B.Praček
Quantitative analysis of a-Si1-xCx thin films // Abstract book of 14th international vacuum congress
Birmingham, 1998. (predavanje, međunarodna recenzija, sažetak, znanstveni)


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Naslov
Quantitative analysis of a-Si1-xCx thin films

Autori
D.Gracin, M.Jakšić, C.Yang, V.Borjanović, B.Praček

Vrsta, podvrsta i kategorija rada
Sažeci sa skupova, sažetak, znanstveni

Izvornik
Abstract book of 14th international vacuum congress / - Birmingham, 1998

Skup
14th international vacuum congress and 10th international conference on solid surfaces

Mjesto i datum
Birmingham, Ujedinjeno Kraljevstvo, 31.08.1998. - 04.09.1998

Vrsta sudjelovanja
Predavanje

Vrsta recenzije
Međunarodna recenzija

Ključne riječi
quantitative analysis; amorphous silicon carbide; IR; ERDA; RBS; Auger

Sažetak
The amorphous hydrogenated silicon crbide thin films (a-Si1-xCx:H)were deposited by magnetron sputtering sourceonto glass and mono-crystalline substrate. Carbon was introduced into the film by adding the benzene vapour into the Argon-hydrogen gas mixture, with partial pressure variation between 0 and 30%. The composition of obtained a-Si1-xCx films was measured by Auger spectroscop, RBS (Routherford Back Scattering), ERDA (Elastic Recoil Detection Analysis)and FTIR spectroscopy. ERDA and RBS analyses were performed simultaneously using a 2 MeV alpha particle beam from the NUS Van se Graaff accelerator. Sample was positioned to the grazing angle incidence of the beam. The ERDA detector positioned in the forward angle had a mylar stopper foil to prevent detection of forward scattered particles. The depth profiles by Auger spectroscopy were determinated by successivemeasurements after Ar ion sputtering events, performed under low angle. In the case of RBS and ERDA, depth profiles were determined by simulation of recoil particle energy spectra.The spatial resolution of applied methods and reliability in determination of total concentration of silicon, carbon, hydrogen and oxigen is discused.

Izvorni jezik
Engleski

Znanstvena područja
Fizika



POVEZANOST RADA


Projekti:
00980302

Ustanove:
Institut "Ruđer Bošković", Zagreb


Citiraj ovu publikaciju:

D.Gracin, M.Jakšić, C.Yang, V.Borjanović, B.Praček
Quantitative analysis of a-Si1-xCx thin films // Abstract book of 14th international vacuum congress
Birmingham, 1998. (predavanje, međunarodna recenzija, sažetak, znanstveni)
D.Gracin, M.Jakšić, C.Yang, V.Borjanović, B.Praček (1998) Quantitative analysis of a-Si1-xCx thin films. U: Abstract book of 14th international vacuum congress.
@article{article, year = {1998}, pages = {55}, keywords = {quantitative analysis, amorphous silicon carbide, IR, ERDA, RBS, Auger}, title = {Quantitative analysis of a-Si1-xCx thin films}, keyword = {quantitative analysis, amorphous silicon carbide, IR, ERDA, RBS, Auger}, publisherplace = {Birmingham, Ujedinjeno Kraljevstvo} }
@article{article, year = {1998}, pages = {55}, keywords = {quantitative analysis, amorphous silicon carbide, IR, ERDA, RBS, Auger}, title = {Quantitative analysis of a-Si1-xCx thin films}, keyword = {quantitative analysis, amorphous silicon carbide, IR, ERDA, RBS, Auger}, publisherplace = {Birmingham, Ujedinjeno Kraljevstvo} }




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