Naslov
Metal-semiconductor transitions for electrons in kagome planes

Autori
Tutiš, Eduard ; Batistić, Ivo ; Jaćimović, Jaćim ; Forró, László

Vrsta, podvrsta i kategorija rada
Sažeci sa skupova, sažetak, znanstveni

Izvornik
Physics of Low-Dimensional Conductors:Problems and Perspectives / - , 2012, 36-36

ISBN
978-953-7666-08-8

Skup
Physics of Low-Dimensional Conductors:Problems and Perspectives

Mjesto i datum
Zagreb, Hrvatska, 25.03.2012. - 28.03.2012

Vrsta sudjelovanja
Pozvano predavanje

Vrsta recenzije
Nije recenziran

Ključne riječi
organic metal; bad metal; polaron hopping

Sažetak
(EDT-TTF-CONH2 )6 [Re6 Se8 (CN)6 ] is recently synthesized compound composed of layers with kagome structure.[1] Above 180 K the material is 2D-homogenous bad metal, or semiconductor, depending on pressure ; [2] below 180 K the electrons charge-order into chains, with the antiferromagnetic correlations developing below 100 K.[1] The concentra- tion is 2/3 electrons per node, at which Dirac point coincides with the Fermi level in the weak coupling limit. The experiments imply, however, that electron-electron and electron- phonon interactions are substantial in (EDT-TTF-CONH2)6 [Re6 Se8 (CN)6 ]. At 1/3 filling the kagome lattice exhibits two particular features: the robustness of the Dirac points towards gap opening in the limit of weak electron-electron and electron-phonon couplings ; and the frustration governing charge and spin ordering at strong coupling. For (EDT-TTF-CONH2)6 [Re6 Se8 (CN)6 ] we propose a variety of extended Hubbard –Holstein model to explore the crossovers observed around 180 K and 100 K, charge and spin ordering instabilities, and to examine the conduction mechanism in various phases.

Izvorni jezik
Engleski

Znanstvena područja
Fizika

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