Pregled bibliografske jedinice broj: 614142
Defects characterization in p-i-n a-Si:H photodiode i-layer
Defects characterization in p-i-n a-Si:H photodiode i-layer // Journal of non-crystalline solids, 363 (2013), 193-198 doi:10.1016/j.jnoncrysol.2012.12.032 (međunarodna recenzija, pregledni rad, znanstveni)
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Naslov
Defects characterization in p-i-n a-Si:H photodiode i-layer
Autori
Gradišnik, Vera ; Linić, Antonio
Izvornik
Journal of non-crystalline solids (0022-3093) 363
(2013);
193-198
Vrsta, podvrsta i kategorija rada
Radovi u časopisima, pregledni rad, znanstveni
Ključne riječi
a-Si:H photodiode; Recombination rate; Space charge density
Sažetak
The recombination rate and space charge distribution in the i-layer of a p-i-n a-Si:H photodiode are analyzed using a model with two dangling-bond-correlated energy levels. The effect of various capture cross sections on recombination rate through such dangling bond, DB states has been studied. The dangling bond state energies have been extracted from the transient response of the a-Si:H p-i-n photodiode on concurrent forward voltage and light pulses at low reverse bias voltages. The analysis with respect to the color (energy) of absorbed light is also performed. The results indicate the energy level position corresponding to positive–neutral and neutral– negative transitions close to the p-i and n-i junctions, respectively. This enables further investigation of such defect influence on photodiode transient response with respect to applications in color sensors in an active pixel sensing system.
Izvorni jezik
Engleski
Znanstvena područja
Fizika, Elektrotehnika
Citiraj ovu publikaciju:
Časopis indeksira:
- Current Contents Connect (CCC)
- Web of Science Core Collection (WoSCC)
- Science Citation Index Expanded (SCI-EXP)
- SCI-EXP, SSCI i/ili A&HCI
- Scopus
Uključenost u ostale bibliografske baze podataka::
- INSPEC
