Pregled bibliografske jedinice broj: 611831
Dual threshold diode based on the superconductor-to- insulator transition in ultrathin TiN films
Dual threshold diode based on the superconductor-to- insulator transition in ultrathin TiN films // Applied physics letters, 102 (2013), 4; 042601-1 doi:10.1063/1.4789510 (međunarodna recenzija, članak, znanstveni)
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Naslov
Dual threshold diode based on the superconductor-to- insulator transition in ultrathin TiN films
Autori
Baturina, Tatyana I. ; Kalok, David ; Bilušić, Ante ; Vinokur, Valerii M. ; Baklanov, Mikhail R. ; Gutakovskii, Anton K. ; Latyshev, Alexander V. ; Strunk, Christoph
Izvornik
Applied physics letters (0003-6951) 102
(2013), 4;
042601-1
Vrsta, podvrsta i kategorija rada
Radovi u časopisima, članak, znanstveni
Ključne riječi
superconductor-insulator transition; low-Tc superconducting thin films; Josephson devices; Superconducting device characterization; design; and modeling
Sažetak
We investigate transport properties of superconducting TiN films in the vicinity of the superconductor-insulator transition (SIT). We show that the current - voltage (I - V) characteristics are mirror-symmetric with respect to the SIT and can be switched to each other by the applied magnetic field. In both superconducting and insulating states the low-temperature I - V characteristics have pronounced diode-like threshold character, demonstrating voltage/current jumps over several orders of magnitude at the corresponding critical current or threshold voltage. We have found that for both states the theory developed for Josephson junction arrays offers a quantitative description of the experimental results.
Izvorni jezik
Engleski
Znanstvena područja
Fizika
Citiraj ovu publikaciju:
Časopis indeksira:
- Current Contents Connect (CCC)
- Web of Science Core Collection (WoSCC)
- Science Citation Index Expanded (SCI-EXP)
- SCI-EXP, SSCI i/ili A&HCI
- Scopus