Pregled bibliografske jedinice broj: 606932
The origin of 0.78 eV line of the dislocation related luminescence in silicon
The origin of 0.78 eV line of the dislocation related luminescence in silicon // Journal of applied physics, 112 (2012), 6; 063528-1 doi:10.1063/1.4754825 (međunarodna recenzija, članak, znanstveni)
CROSBI ID: 606932 Za ispravke kontaktirajte CROSBI podršku putem web obrasca
Naslov
The origin of 0.78 eV line of the dislocation related luminescence in silicon
Autori
Xiang, L. ; Li, D. ; Jin, L. ; Pivac, Branko ; Yang, D.
Izvornik
Journal of applied physics (0021-8979) 112
(2012), 6;
063528-1
Vrsta, podvrsta i kategorija rada
Radovi u časopisima, članak, znanstveni
Ključne riječi
silicon; dislocations; photoluminescence
Sažetak
In this paper, the 0.78 eV line of the dislocation related luminescence in the electron-irradiated silicon has been investigated. It is found that the 0.78 eV line only exists in float zone silicon samples, and its intensity could be largely enhanced by high temperature and long time annealing while no 0.78 eV line was found in Czochralski silicon. The activation energy of 0.78 eV line in floating-zone silicon is similar to 13 meV, indicating a different nature from that of D1/D2 lines which can be ascribed to specific reconstructed dislocations which could be easily affected by point defects and temperature.
Izvorni jezik
Engleski
Znanstvena područja
Fizika
POVEZANOST RADA
Projekti:
098-0982886-2866 - Temeljna svojstva nanostruktura i defekata u poluvodičima i dielektricima (Pivac, Branko, MZOS ) ( CroRIS)
Ustanove:
Institut "Ruđer Bošković", Zagreb
Profili:
Branko Pivac
(autor)
Citiraj ovu publikaciju:
Časopis indeksira:
- Current Contents Connect (CCC)
- Web of Science Core Collection (WoSCC)
- Science Citation Index Expanded (SCI-EXP)
- SCI-EXP, SSCI i/ili A&HCI
- Scopus
