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Pregled bibliografske jedinice broj: 590156

TiO2 Coating for SnO2:F Films Produced by Filtered Cathodic Arc Evaporation for Improved Resistance to H+ Radical Exposure

Ristova, Mimoza; Gligorova, A.; Nasov, Ilija; Gracin, Davor; Milun, Milorad; Kostadinova-Boskova, Hristina; Popeski-Dimovski, Riste
TiO2 Coating for SnO2:F Films Produced by Filtered Cathodic Arc Evaporation for Improved Resistance to H+ Radical Exposure // Journal of electronic materials, 41 (2012), 11; 3087-3094 doi:10.1007/s11664-012-2221-4 (međunarodna recenzija, članak, znanstveni)

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Naslov
TiO2 Coating for SnO2:F Films Produced by Filtered Cathodic Arc Evaporation for Improved Resistance to H+ Radical Exposure

Autori
Ristova, Mimoza ; Gligorova, A. ; Nasov, Ilija ; Gracin, Davor ; Milun, Milorad ; Kostadinova-Boskova, Hristina ; Popeski-Dimovski, Riste

Izvornik
Journal of electronic materials (0361-5235) 41 (2012), 11; 3087-3094

Vrsta, podvrsta i kategorija rada
Radovi u časopisima, članak, znanstveni

Ključne riječi
TiO2; thin-film coating; AFM; XPS; filtered cathodic arc

Sažetak
Titanium dioxide thin films were deposited by filtered cathodic arc evaporation (FCAE) from a Ti target in an oxygen atmosphere onto (a) fuorine-doped tin oxide substrates SnO2:F (FTO) and (b) glass microscope slides. The growth rate calculated from film thickness profilometry measurements was found to 18 be approximately 0.8 nm/s. The films were highly transparent to visible light. x-Ray photoemission spectroscopy analysis of the Ti 2p electron binding-energy shift confirmed the presence of a TiO2 stoichiometric compound. The results for the root-mean-square (RMS) surface roughness of the films deposited onto FTO substrates evaluated by atomic force microscopy suggested nanostructured film surfaces. When exposed to hydrogen plasma, TiO2 films revealed insignificant changes in the optical spectra. The initial sheet resistance of the SnO2:F layer was 14 Ohm/sq. The deposition of the top TiO2 layer (45 nm thick) over the FTO electrode resulted in an increase of the sheet resistance of 2 Ohm/sq. In addition, the sheet resistance of the double-layer FTO/TiO2 transparent conductive oxide (TCO) electrode increased by 1 Ohm/sq as a result of H+ plasma exposure. Regardless of the TiO2 film’s low conductivity, a thin protective layer could be coated onto FTO films (presumably 15 nm thick) due to their high transparency, offering high resistance to aggressive H+ plasma conditions. In this paper we show that 50-nm-thick TiO2 coating on FTO films provides sufficient protection against deterioration of transparency and conductivity due to hydrogen radical exposure.

Izvorni jezik
Engleski

Znanstvena područja
Fizika



POVEZANOST RADA

Projekti:
098-0982886-2894 - Tanki filmovi legura silicija na prijelazu iz amorfne u uređenu strukturu (Gracin, Davor, MZOS ) ( CroRIS)

Ustanove:
Institut "Ruđer Bošković", Zagreb

Profili:

Avatar Url Davor Gracin (autor)

Avatar Url Milorad Milun (autor)

Poveznice na cjeloviti tekst rada:

doi link.springer.com

Citiraj ovu publikaciju:

Ristova, Mimoza; Gligorova, A.; Nasov, Ilija; Gracin, Davor; Milun, Milorad; Kostadinova-Boskova, Hristina; Popeski-Dimovski, Riste
TiO2 Coating for SnO2:F Films Produced by Filtered Cathodic Arc Evaporation for Improved Resistance to H+ Radical Exposure // Journal of electronic materials, 41 (2012), 11; 3087-3094 doi:10.1007/s11664-012-2221-4 (međunarodna recenzija, članak, znanstveni)
Ristova, M., Gligorova, A., Nasov, I., Gracin, D., Milun, M., Kostadinova-Boskova, H. & Popeski-Dimovski, R. (2012) TiO2 Coating for SnO2:F Films Produced by Filtered Cathodic Arc Evaporation for Improved Resistance to H+ Radical Exposure. Journal of electronic materials, 41 (11), 3087-3094 doi:10.1007/s11664-012-2221-4.
@article{article, author = {Ristova, Mimoza and Gligorova, A. and Nasov, Ilija and Gracin, Davor and Milun, Milorad and Kostadinova-Boskova, Hristina and Popeski-Dimovski, Riste}, year = {2012}, pages = {3087-3094}, DOI = {10.1007/s11664-012-2221-4}, keywords = {TiO2, thin-film coating, AFM, XPS, filtered cathodic arc}, journal = {Journal of electronic materials}, doi = {10.1007/s11664-012-2221-4}, volume = {41}, number = {11}, issn = {0361-5235}, title = {TiO2 Coating for SnO2:F Films Produced by Filtered Cathodic Arc Evaporation for Improved Resistance to H+ Radical Exposure}, keyword = {TiO2, thin-film coating, AFM, XPS, filtered cathodic arc} }
@article{article, author = {Ristova, Mimoza and Gligorova, A. and Nasov, Ilija and Gracin, Davor and Milun, Milorad and Kostadinova-Boskova, Hristina and Popeski-Dimovski, Riste}, year = {2012}, pages = {3087-3094}, DOI = {10.1007/s11664-012-2221-4}, keywords = {TiO2, thin-film coating, AFM, XPS, filtered cathodic arc}, journal = {Journal of electronic materials}, doi = {10.1007/s11664-012-2221-4}, volume = {41}, number = {11}, issn = {0361-5235}, title = {TiO2 Coating for SnO2:F Films Produced by Filtered Cathodic Arc Evaporation for Improved Resistance to H+ Radical Exposure}, keyword = {TiO2, thin-film coating, AFM, XPS, filtered cathodic arc} }

Časopis indeksira:


  • Current Contents Connect (CCC)
  • Web of Science Core Collection (WoSCC)
    • Science Citation Index Expanded (SCI-EXP)
    • SCI-EXP, SSCI i/ili A&HCI
  • Scopus

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